Properties of InAs metal-oxide-semiconductor structures with atomic-layer-deposited Al2O3 Dielectric

Published 2008 View Full Article

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Title
Properties of InAs metal-oxide-semiconductor structures with atomic-layer-deposited Al2O3 Dielectric
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 92, Issue 14, Pages 143507
Publisher
AIP Publishing
Online
2008-04-12
DOI
10.1063/1.2908926

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