In0.53Ga0.47As based metal oxide semiconductor capacitors with atomic layer deposition ZrO2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1nm

Published 2008 View Full Article

Authors

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Journal

APPLIED PHYSICS LETTERS

Volume 92, Issue 22, Pages 222904

Publisher

AIP Publishing

Online

2008-06-04

DOI

10.1063/1.2931031

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