Journal
MICROELECTRONIC ENGINEERING
Volume 86, Issue 7-9, Pages 1544-1549Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.mee.2009.03.030
Keywords
III-V Mos; Pinning; Passivation; High mobility; Oxidation states; ALD; Alternate channel
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We review our recent studies of the passivation of the GaAs and InGaAs surface using a combination of in situ and ex situ surface analysis and capacitor measurements. We find that the control of Ga-oxides in particular appears to play an important role in understanding the characteristics of III-V MOS devices. (C) 2009 Elsevier B.V. All rights reserved.
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