Interface characteristics of ZrO2 high-k gate dielectrics on epitaxial Ge capacitor layers after thermal desorption of Ge native oxide and Ge nitridation

Title
Interface characteristics of ZrO2 high-k gate dielectrics on epitaxial Ge capacitor layers after thermal desorption of Ge native oxide and Ge nitridation
Authors
Keywords
-
Journal
THIN SOLID FILMS
Volume 516, Issue 12, Pages 4107-4110
Publisher
Elsevier BV
Online
2007-10-30
DOI
10.1016/j.tsf.2007.10.012

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