Atomic Layer Deposition of Hafnium Oxide on Ge and GaAs Substrates: Precursors and Surface Preparation

Atomic-layer-deposited HfO2 on In0.53Ga0.47As: Passivation and energy-band parameters

(2008) Y. C. Chang et al.   APPLIED PHYSICS LETTERS

Interface of atomic layer deposited HfO2 films on GaAs (100) surfaces

(2008) Justin C. Hackley et al.   APPLIED PHYSICS LETTERS

GaAs interfacial self-cleaning by atomic layer deposition

(2008) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS

Ge-Interface Engineering With Ozone Oxidation for Low Interface-State Density

(2008) Duygu Kuzum et al.   IEEE ELECTRON DEVICE LETTERS

HfO2 gate dielectric on (NH4)2S passivated (100) GaAs grown by atomic layer deposition

(2008) P. T. Chen et al.   JOURNAL OF APPLIED PHYSICS

Effects of interfacial sulfidization and thermal annealing on the electrical properties of an atomic-layer-deposited Al2O3 gate dielectric on GaAs substrate

(2008) Chao-Ching Cheng et al.   JOURNAL OF APPLIED PHYSICS

Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

(2008) D. P. Brunco et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY