Role of Fe impurity complexes in the degradation of GaN/AlGaN high-electron-mobility transistors

Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy

(2013) A. Sasikumar et al.   APPLIED PHYSICS LETTERS

Spatially-resolved spectroscopic measurements of Ec − 0.57 eV traps in AlGaN/GaN high electron mobility transistors

(2013) D. W. Cardwell et al.   APPLIED PHYSICS LETTERS

Proton-Induced Dehydrogenation of Defects in AlGaN/GaN HEMTs

(2013) Jin Chen et al.   IEEE TRANSACTIONS ON NUCLEAR SCIENCE

Molecular beam epitaxy for high-performance Ga-face GaN electron devices

(2013) Stephen W Kaun et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Role of barrier structure in current collapse of AlGaN/GaN high electron mobility transistors

(2012) Sandeepan DasGupta et al.   APPLIED PHYSICS LETTERS

Dynamic Transconductance Dispersion Characterization of Channel Hot-Carrier Stressed 0.25- $\mu\hbox{m}$ AlGaN/GaN HEMTs

(2012) Marco Silvestri et al.   IEEE ELECTRON DEVICE LETTERS

Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors

(2011) M. Ťapajna et al.   APPLIED PHYSICS LETTERS

Dehydrogenation of defects and hot-electron degradation in GaN high-electron-mobility transistors

(2011) Y. S. Puzyrev et al.   JOURNAL OF APPLIED PHYSICS

Reliability of III–V devices – The defects that cause the trouble

(2011) Sokrates T. Pantelides et al.   MICROELECTRONIC ENGINEERING

Room-temperature diffusive phenomena in semiconductors: The case of AlGaN

(2011) Keith H. Warnick et al.   PHYSICAL REVIEW B

Influence of Ga/N ratio on morphology, vacancies, and electrical transport in GaN grown by molecular beam epitaxy at high temperature

(2010) G. Koblmüller et al.   APPLIED PHYSICS LETTERS

Importance of impurity diffusion for early stage degradation in AlGaN/GaN high electron mobility transistors upon electrical stress

(2010) M. Ťapajna et al.   APPLIED PHYSICS LETTERS

Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors

(2010) Prashanth Makaram et al.   APPLIED PHYSICS LETTERS

Theory of hot-carrier-induced phenomena in GaN high-electron-mobility transistors

(2010) Y. S. Puzyrev et al.   APPLIED PHYSICS LETTERS

Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress

(2010) Milan Ťapajna et al.   IEEE ELECTRON DEVICE LETTERS

Role of stress voltage on structural degradation of GaN high-electron-mobility transistors

(2010) Jungwoo Joh et al.   MICROELECTRONICS RELIABILITY

Heyd-Scuseria-Ernzerhof hybrid functional for calculating the lattice dynamics of semiconductors

(2009) Kerstin Hummer et al.   PHYSICAL REVIEW B

Deep level optical and thermal spectroscopy of traps in n-GaN grown by ammonia molecular beam epitaxy

(2008) A. R. Arehart et al.   APPLIED PHYSICS LETTERS