Dehydrogenation of defects and hot-electron degradation in GaN high-electron-mobility transistors

Theory of hot-carrier-induced phenomena in GaN high-electron-mobility transistors

(2010) Y. S. Puzyrev et al.   APPLIED PHYSICS LETTERS

Electrical-stress-induced degradation in AlGaN/GaN high electron mobility transistors grown under gallium-rich, nitrogen-rich, and ammonia-rich conditions

(2010) T. Roy et al.   APPLIED PHYSICS LETTERS

Nanoscale mapping of temperature and defect evolution inside operating AlGaN/GaN high electron mobility transistors

(2009) Chung-Han Lin et al.   APPLIED PHYSICS LETTERS

Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems

(2009) M. Dammann et al.   MICROELECTRONICS RELIABILITY

Deep level optical and thermal spectroscopy of traps in n-GaN grown by ammonia molecular beam epitaxy

(2008) A. R. Arehart et al.   APPLIED PHYSICS LETTERS

Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

(2008) Gaudenzio Meneghesso et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY