Influence of Ga/N ratio on morphology, vacancies, and electrical transport in GaN grown by molecular beam epitaxy at high temperature

Title
Influence of Ga/N ratio on morphology, vacancies, and electrical transport in GaN grown by molecular beam epitaxy at high temperature
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 97, Issue 19, Pages 191915
Publisher
AIP Publishing
Online
2010-11-13
DOI
10.1063/1.3514236

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