Room-temperature diffusive phenomena in semiconductors: The case of AlGaN

Dehydrogenation of defects and hot-electron degradation in GaN high-electron-mobility transistors

(2011) Y. S. Puzyrev et al.   JOURNAL OF APPLIED PHYSICS

Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors

(2010) Prashanth Makaram et al.   APPLIED PHYSICS LETTERS

A model for the critical voltage for electrical degradation of GaN high electron mobility transistors

(2010) Jungwoo Joh et al.   MICROELECTRONICS RELIABILITY

Origin of Colossal Ionic Conductivity in Oxide Multilayers: Interface Induced Sublattice Disorder

(2010) Timothy J. Pennycook et al.   PHYSICAL REVIEW LETTERS

GaN HEMT reliability

(2009) J.A. del Alamo et al.   MICROELECTRONICS RELIABILITY

TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs

(2008) U. Chowdhury et al.   IEEE ELECTRON DEVICE LETTERS

Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors

(2008) Jungwoo Joh et al.   IEEE ELECTRON DEVICE LETTERS

Vacancies in wurtzite GaN and AlN

(2008) K Laaksonen et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Observation of Atomic Diffusion at Twin-Modified Grain Boundaries in Copper

(2008) K.-C. Chen et al.   SCIENCE