Role of stress voltage on structural degradation of GaN high-electron-mobility transistors

Title
Role of stress voltage on structural degradation of GaN high-electron-mobility transistors
Authors
Keywords
-
Journal
MICROELECTRONICS RELIABILITY
Volume 51, Issue 2, Pages 201-206
Publisher
Elsevier BV
Online
2010-09-21
DOI
10.1016/j.microrel.2010.08.021

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