Dynamic Transconductance Dispersion Characterization of Channel Hot-Carrier Stressed 0.25- $\mu\hbox{m}$ AlGaN/GaN HEMTs

Non-localized trapping effects in AlGaN/GaN heterojunction field-effect transistors subjected to on-state bias stress

(2012)   JOURNAL OF APPLIED PHYSICS

Evidence for impact ionisation in AlGaN/GaN HEMTs with InGaN back-barrier

(2011) N. Killat et al.   ELECTRONICS LETTERS

Dehydrogenation of defects and hot-electron degradation in GaN high-electron-mobility transistors

(2011) Y. S. Puzyrev et al.   JOURNAL OF APPLIED PHYSICS

Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress

(2010) Milan Ťapajna et al.   IEEE ELECTRON DEVICE LETTERS

AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes

(2010) Martin Kuball et al.   MICROELECTRONICS RELIABILITY

Investigation of trapping effects in AlGaN/GaN/Si field-effect transistors by frequency dependent capacitance and conductance analysis

(2008) R. Stoklas et al.   APPLIED PHYSICS LETTERS

Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

(2008) Gaudenzio Meneghesso et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY