Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy

Spatially-resolved spectroscopic measurements of Ec − 0.57 eV traps in AlGaN/GaN high electron mobility transistors

(2013) D. W. Cardwell et al.   APPLIED PHYSICS LETTERS

Nm-scale measurements of fast surface potential transients in an AlGaN/GaN high electron mobility transistor

(2012) D. W. Cardwell et al.   APPLIED PHYSICS LETTERS

Access-Region Defect Spectroscopy of DC-Stressed N-Polar GaN MIS-HEMTs

(2012) A. Sasikumar et al.   IEEE ELECTRON DEVICE LETTERS

Direct observation of 0.57eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors

(2012) A.R. Arehart et al.   SOLID-STATE ELECTRONICS

245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment

(2011) Dong Seup Lee et al.   IEEE ELECTRON DEVICE LETTERS

Deep Traps in InAlN Lattice-Matched to GaN Grown by Metal Organic Chemical Vapor Deposition Studied by Deep-Level Transient Spectroscopy

(2011) Zhitao Chen et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Electrical characterization of n-type Al0.30Ga0.70N Schottky diodes

(2011) A. R. Arehart et al.   JOURNAL OF APPLIED PHYSICS

Traps and defects in pre- and post- stressed AlGaN-GaN high electron mobility transistors

(2011) Yongkun Sin et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage

(2010) W. Chikhaoui et al.   APPLIED PHYSICS LETTERS

A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

(2010) Jungwoo Joh et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation

(2009) A. Chini et al.   IEEE ELECTRON DEVICE LETTERS

AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz

(2009) N. Sarazin et al.   IEEE ELECTRON DEVICE LETTERS

High performance and high reliability AlGaN/GaN HEMTs

(2009) Toshihide Kikkawa et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Effect of Al Composition and Gate Recess on Power Performance of AlGaN/GaN High-Electron Mobility Transistors

(2008) Y. Pei et al.   IEEE ELECTRON DEVICE LETTERS