Importance of impurity diffusion for early stage degradation in AlGaN/GaN high electron mobility transistors upon electrical stress

Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors

(2010) Prashanth Makaram et al.   APPLIED PHYSICS LETTERS

Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress

(2010) Milan Ťapajna et al.   IEEE ELECTRON DEVICE LETTERS

Theoretical study of the stabilization mechanisms of the different stable oxygen incorporated (101¯0) surface of III-nitrides

(2010) Honggang Ye et al.   JOURNAL OF APPLIED PHYSICS

Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation

(2009) A. Chini et al.   IEEE ELECTRON DEVICE LETTERS

AlGaN/GaN HFET reliability

(2009) Robert Trew et al.   IEEE MICROWAVE MAGAZINE

Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors

(2009) J. Kuzmik et al.   JOURNAL OF APPLIED PHYSICS

Physical degradation of GaN HEMT devices under high drain bias reliability testing

(2009) S.Y. Park et al.   MICROELECTRONICS RELIABILITY

TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs

(2008) U. Chowdhury et al.   IEEE ELECTRON DEVICE LETTERS

Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors

(2008) Jungwoo Joh et al.   IEEE ELECTRON DEVICE LETTERS

Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

(2008) Gaudenzio Meneghesso et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY