Role of Fe impurity complexes in the degradation of GaN/AlGaN high-electron-mobility transistors
出版年份 2015 全文链接
标题
Role of Fe impurity complexes in the degradation of GaN/AlGaN high-electron-mobility transistors
作者
关键词
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出版物
APPLIED PHYSICS LETTERS
Volume 106, Issue 5, Pages 053505
出版商
AIP Publishing
发表日期
2015-02-05
DOI
10.1063/1.4907675
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy
- (2013) A. Sasikumar et al. APPLIED PHYSICS LETTERS
- Spatially-resolved spectroscopic measurements of Ec − 0.57 eV traps in AlGaN/GaN high electron mobility transistors
- (2013) D. W. Cardwell et al. APPLIED PHYSICS LETTERS
- Proton-Induced Dehydrogenation of Defects in AlGaN/GaN HEMTs
- (2013) Jin Chen et al. IEEE TRANSACTIONS ON NUCLEAR SCIENCE
- Molecular beam epitaxy for high-performance Ga-face GaN electron devices
- (2013) Stephen W Kaun et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Role of barrier structure in current collapse of AlGaN/GaN high electron mobility transistors
- (2012) Sandeepan DasGupta et al. APPLIED PHYSICS LETTERS
- Dynamic Transconductance Dispersion Characterization of Channel Hot-Carrier Stressed 0.25- $\mu\hbox{m}$ AlGaN/GaN HEMTs
- (2012) Marco Silvestri et al. IEEE ELECTRON DEVICE LETTERS
- Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors
- (2011) M. Ťapajna et al. APPLIED PHYSICS LETTERS
- Dehydrogenation of defects and hot-electron degradation in GaN high-electron-mobility transistors
- (2011) Y. S. Puzyrev et al. JOURNAL OF APPLIED PHYSICS
- Reliability of III–V devices – The defects that cause the trouble
- (2011) Sokrates T. Pantelides et al. MICROELECTRONIC ENGINEERING
- Room-temperature diffusive phenomena in semiconductors: The case of AlGaN
- (2011) Keith H. Warnick et al. PHYSICAL REVIEW B
- Influence of Ga/N ratio on morphology, vacancies, and electrical transport in GaN grown by molecular beam epitaxy at high temperature
- (2010) G. Koblmüller et al. APPLIED PHYSICS LETTERS
- Importance of impurity diffusion for early stage degradation in AlGaN/GaN high electron mobility transistors upon electrical stress
- (2010) M. Ťapajna et al. APPLIED PHYSICS LETTERS
- Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors
- (2010) Prashanth Makaram et al. APPLIED PHYSICS LETTERS
- Theory of hot-carrier-induced phenomena in GaN high-electron-mobility transistors
- (2010) Y. S. Puzyrev et al. APPLIED PHYSICS LETTERS
- Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress
- (2010) Milan Ťapajna et al. IEEE ELECTRON DEVICE LETTERS
- Role of stress voltage on structural degradation of GaN high-electron-mobility transistors
- (2010) Jungwoo Joh et al. MICROELECTRONICS RELIABILITY
- Heyd-Scuseria-Ernzerhof hybrid functional for calculating the lattice dynamics of semiconductors
- (2009) Kerstin Hummer et al. PHYSICAL REVIEW B
- Deep level optical and thermal spectroscopy of traps in n-GaN grown by ammonia molecular beam epitaxy
- (2008) A. R. Arehart et al. APPLIED PHYSICS LETTERS
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