N-polar GaN: Epitaxy, properties, and device applications

Self-Aligned E-mode GaN p-Channel FinFET with I$_{ON}$ > 100 mA/mm and I$_{ON}$=I$_{OFF}$ > 10$^{7}$

(2022) Nadim Chowdhury et al.   IEEE ELECTRON DEVICE LETTERS

N-polar InGaN/GaN nanowires: overcoming the efficiency cliff of red-emitting micro-LEDs

(2022) A. Pandey et al.   Photonics Research

Full InGaN red (625 nm) micro-LED (10 μm) demonstration on a relaxed pseudo-substrate

(2021) Amelie Dussaigne et al.   Applied Physics Express

Growth of lattice-relaxed InGaN thick films on patterned sapphire substrates by tri-halide vapor phase epitaxy

(2021) Kentaro Ema et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Gallium nitride-based complementary logic integrated circuits

(2021) Zheyang Zheng et al.   Nature Electronics

Optical properties of N-polar GaN: The possible role of nitrogen vacancy-related defects

(2021) Piotr Tatarczak et al.   APPLIED SURFACE SCIENCE

Observation of self-assembled InGaN/GaN superlattice structure grown on N-polar GaN by plasma-assisted molecular beam epitaxy

(2021) K. Khan et al.   APL Materials

N-polar InGaN nanowires: breaking the efficiency bottleneck of nano and micro LEDs

(2021) Xianhe Liu et al.   Photonics Research

Strain-induced formation of self-assembled InGaN/GaN superlattices in nominal InGaN films grown by plasma-assisted molecular beam epitaxy

(2021) Kamruzzaman Khan et al.   Physical Review Materials

Four-inch high quality crack-free AlN layer grown on a high-temperature annealed AlN template by MOCVD

(2021) Shangfeng Liu et al.   Journal of Semiconductors

W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs

(2020) Brian Romanczyk et al.   IEEE ELECTRON DEVICE LETTERS

Bias-Dependent Electron Velocity Extracted From N-Polar GaN Deep Recess HEMTs

(2020) Brian Romanczyk et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Proposed existence of acceptor-like traps at positive polarization interfaces in p-type III-nitride semiconductors

(2020) Athith Krishna et al.   APPLIED PHYSICS LETTERS

Record high electron mobility and low sheet resistance on scaled-channel N-polar GaN/AlN heterostructures grown on on-axis N-polar GaN substrates by plasma-assisted molecular beam epitaxy

(2020) Sandra Diez et al.   APPLIED PHYSICS LETTERS

Color-tunable

(2020) Shubhra S. Pasayat et al.   APPLIED PHYSICS LETTERS

Annealing behaviors of vacancy-type defects in AlN deposited by radio-frequency sputtering and metalorganic vapor phase epitaxy studied using monoenergetic positron beams

(2020) Akira Uedono et al.   JOURNAL OF APPLIED PHYSICS

Full InGaN red light emitting diodes

(2020) A. Dussaigne et al.   JOURNAL OF APPLIED PHYSICS

Demonstration of ultra-small (0.2%) for mini-displays

(2020) Shubhra S. Pasayat et al.   Applied Physics Express

Design of ultra-scaled-channel N-polar GaN HEMTs with high charge density: A systematic study of hole traps and their impact on charge density in the channel

(2020) Subhajit Mohanty et al.   JOURNAL OF APPLIED PHYSICS

High-temperature annealing of AlN films grown on 4H–SiC

(2020) F. Brunner et al.   AIP Advances

First demonstration of RF N-polar GaN MIS-HEMTs grown on bulk GaN using PAMBE

(2019) Shubhra S Pasayat et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Incorporation of Carbon in Free-Standing HVPE-Grown GaN Substrates

(2019) M. E. Zvanut et al.   JOURNAL OF ELECTRONIC MATERIALS

Growth and Characterization of High In-content InGaN grown by MBE using Metal Modulated Epitaxy Technique (MME)

(2019) Zhiwei Xing et al.   JOURNAL OF CRYSTAL GROWTH

Reduction of threading dislocation density and suppression of cracking in sputter-deposited AlN templates annealed at high temperatures

(2019) Kenjiro Uesugi et al.   Applied Physics Express

Influence of intermediate layers on thick InGaN growth using tri-halide vapor phase epitaxy

(2019) Kentaro Ema et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

p-Channel GaN Transistor Based on p-GaN/AlGaN/GaN on Si

(2019) Nadim Chowdhury et al.   IEEE ELECTRON DEVICE LETTERS

Investigation of nitrogen polar p-type doped GaN/AlxGa(1-x)N superlattices for applications in wide-bandgap p-type field effect transistors

(2019) Athith Krishna et al.   APPLIED PHYSICS LETTERS

Elimination of macrostep-induced current flow nonuniformity in vertical GaN PN diode using carbon-free drift layer grown by hydride vapor phase epitaxy

(2018) Hajime Fujikura et al.   Applied Physics Express

Luminescent N-polar (In,Ga)N/GaN quantum wells achieved by plasma-assisted molecular beam epitaxy at temperatures exceeding 700 °C

(2018) C. Chèze et al.   APPLIED PHYSICS LETTERS

Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs

(2018) Brian Romanczyk et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

The 2018 GaN power electronics roadmap

(2018) H Amano et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy

(2018) Y. Oshima et al.   APL Materials

N-Polar GaN Cap MISHEMT With Record Power Density Exceeding 6.5 W/mm at 94 GHz

(2017) Steven Wienecke et al.   IEEE ELECTRON DEVICE LETTERS

Compositionally graded InGaN layers grown on vicinal N-face GaN substrates by plasma-assisted molecular beam epitaxy

(2017) Karine Hestroffer et al.   JOURNAL OF CRYSTAL GROWTH

Review—The Current and Emerging Applications of the III-Nitrides

(2017) Chuanle Zhou et al.   ECS Journal of Solid State Science and Technology

Controlled Coalescence of AlGaN Nanowire Arrays: An Architecture for Nearly Dislocation-Free Planar Ultraviolet Photonic Device Applications

(2016) Binh H. Le et al.   ADVANCED MATERIALS

Record 34.2% efficient mm-wave N-polar AlGaN/GaN MISHEMT at 87 GHz

(2016) B. Romanczyk et al.   ELECTRONICS LETTERS

N-Polar Deep Recess MISHEMTs with Record 2.9 W/mm at 94 GHz

(2016) Steven Wienecke et al.   IEEE ELECTRON DEVICE LETTERS

Tri-halide vapor phase epitaxy of thick GaN using gaseous GaCl 3 precursor

(2016) Hisashi Murakami et al.   JOURNAL OF CRYSTAL GROWTH

Growth of thick and high crystalline quality InGaN layers on GaN (0001¯) substrate using tri-halide vapor phase epitaxy

(2016) Takahide Hirasaki et al.   JOURNAL OF CRYSTAL GROWTH

IVT measurements of GaN power Schottky diodes with drift layers grown by HVPE on HVPE GaN substrates

(2016) R. P. Tompkins et al.   JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Full-Color Single Nanowire Pixels for Projection Displays

(2016) Yong-Ho Ra et al.   NANO LETTERS

Influence of GaN column diameter on structural properties for InGaN nanocolumns grown on top of GaN nanocolumns

(2016) Takao Oto et al.   AIP Advances

Comparison of the Luminous Efficiencies of Ga- and N-PolarInxGa1−xN/InyGa1−yNQuantum Wells Grown by Plasma-Assisted Molecular Beam Epitaxy

(2016) Sergio Fernández-Garrido et al.   Physical Review Applied

Correlation among Growth Conditions, Morphology, and Optical Properties of Nanocolumnar InGaN/GaN Heterostructures Selectively Grown by Molecular Beam Epitaxy

(2015) Steven Albert et al.   CRYSTAL GROWTH & DESIGN

Polarity-Controlled GaN/AlN Nucleation Layers for Selective-Area Growth of GaN Nanowire Arrays on Si(111) Substrates by Molecular Beam Epitaxy

(2015) Matt D. Brubaker et al.   CRYSTAL GROWTH & DESIGN

Indium incorporation dynamics in N-polar InAlN thin films grown by plasma-assisted molecular beam epitaxy on freestanding GaN substrates

(2015) M.T. Hardy et al.   JOURNAL OF CRYSTAL GROWTH

Formation Mechanisms of GaN Nanowires Grown by Selective Area Growth Homoepitaxy

(2015) Žarko Gačević et al.   NANO LETTERS

Selective-area growth of GaN nanocolumns on Si(111) substrates for application to nanocolumn emitters with systematic analysis of dislocation filtering effect of nanocolumns

(2015) Katsumi Kishino et al.   NANOTECHNOLOGY

N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates

(2015) Elaheh Ahmadi et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Relaxedc-plane InGaN layers for the growth of strain-reduced InGaN quantum wells

(2015) Karine Hestroffer et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Elimination of columnar microstructure in N-face InAlN, lattice-matched to GaN, grown by plasma-assisted molecular beam epitaxy in the N-rich regime

(2014) Elaheh Ahmadi et al.   APPLIED PHYSICS LETTERS

Growth of thick InGaN layers by tri-halide vapor phase epitaxy

(2014) Takahide Hirasaki et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics

(2014) S. Valdueza-Felip et al.   JOURNAL OF APPLIED PHYSICS

Gallium Nitride as an Electromechanical Material

(2014) Mina Rais-Zadeh et al.   JOURNAL OF MICROELECTROMECHANICAL SYSTEMS

GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy

(2014) Stephen W Kaun et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Recent progress in metal-organic chemical vapor deposition of $\left( 000\bar{1} \right)$ N-polar group-III nitrides

(2014) Stacia Keller et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

(2013) Steven P. DenBaars et al.   ACTA MATERIALIA

Monolithic Integration of InGaN-Based Nanocolumn Light-Emitting Diodes with Different Emission Colors

(2013) Katsumi Kishino et al.   Applied Physics Express

Step-flow growth mode instability of N-polar GaN under N-excess

(2013) C. Chèze et al.   APPLIED PHYSICS LETTERS

Highly luminescent, high-indium-content InGaN film with uniform composition and full misfit-strain relaxation

(2013) A. M. Fischer et al.   APPLIED PHYSICS LETTERS

Selective area growth and characterization of GaN nanocolumns, with and without an InGaN insertion, on semi-polar (11–22) GaN templates

(2013) A. Bengoechea-Encabo et al.   APPLIED PHYSICS LETTERS

Selective area growth and characterization of InGaN nanocolumns for phosphor-free white light emission

(2013) S. Albert et al.   JOURNAL OF APPLIED PHYSICS

Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on GaN-buffered Si(111): from ultraviolet to infrared emission

(2013) S Albert et al.   NANOTECHNOLOGY

A donor-like trap at the InGaN/GaN interface with net negative polarization and its possible consequence on internal quantum efficiency

(2013) Christopher A Schaake et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

N-polar GaN epitaxy and high electron mobility transistors

(2013) Man Hoi Wong et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Molecular beam epitaxy for high-performance Ga-face GaN electron devices

(2013) Stephen W Kaun et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures

(2012) Stephen W. Kaun et al.   APPLIED PHYSICS LETTERS

Observation of columnar microstructure in lattice-matched InAlN/GaN grown by plasma assisted molecular beam epitaxy

(2012) Soojeong Choi et al.   APPLIED PHYSICS LETTERS

Correlation between threading dislocation density and sheet resistance of AlGaN/AlN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy

(2012) Stephen W. Kaun et al.   APPLIED PHYSICS LETTERS

Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes

(2012) F. Akyol et al.   APPLIED PHYSICS LETTERS

Self-Aligned N-Polar GaN/InAlN MIS-HEMTs With Record Extrinsic Transconductance of 1105 mS/mm

(2012) Nidhi et al.   IEEE ELECTRON DEVICE LETTERS

Design of High-Aspect-Ratio T-Gates on N-Polar GaN/AlGaN MIS-HEMTs for High $f_{\max}$

(2012) Daniel J. Denninghoff et al.   IEEE ELECTRON DEVICE LETTERS

Scaled Self-Aligned N-Polar GaN/AlGaN MIS-HEMTs With $f_{T}$ of 275 GHz

(2012) Nidhi et al.   IEEE ELECTRON DEVICE LETTERS

Growth and Characterization of N-Polar GaN Films on Si(111) by Plasma Assisted Molecular Beam Epitaxy

(2012) Sansaptak Dasgupta et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Dependence of N-polar GaN rod morphology on growth parameters during selective area growth by MOVPE

(2012) Shunfeng Li et al.   JOURNAL OF CRYSTAL GROWTH

Growth, Structural, and Electrical Characterizations of N-Polar InAlN by Plasma-Assisted Molecular Beam Epitaxy

(2011) Sansaptak Dasgupta et al.   Applied Physics Express

Enhancement-Mode N-Polar GaN Metal–Insulator–Semiconductor Field Effect Transistors with Current Gain Cutoff Frequency of 120 GHz

(2011) Uttam Singisetti et al.   Applied Physics Express

Effects of Threading Dislocation Density on the Gate Leakage of AlGaN/GaN Heterostructures for High Electron Mobility Transistors

(2011) Stephen W. Kaun et al.   Applied Physics Express

Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors

(2011) M. Ťapajna et al.   APPLIED PHYSICS LETTERS

Polarity and Its Influence on Growth Mechanism during MOVPE Growth of GaN Sub-micrometer Rods

(2011) S. F. Li et al.   CRYSTAL GROWTH & DESIGN

InAlN/GaN HEMTs With AlGaN Back Barriers

(2011) Dong Seup Lee et al.   IEEE ELECTRON DEVICE LETTERS

1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance

(2011) Rongming Chu et al.   IEEE ELECTRON DEVICE LETTERS

Enhancement-Mode N-Polar GaN MOS-HFET With 5-nm GaN Channel, 510-mS/mm $g_{m}$, and 0.66-$\Omega\cdot \hbox{mm}$$R_{\rm on}$

(2011) Uttam Singisetti et al.   IEEE ELECTRON DEVICE LETTERS

Microwave Power Performance N-Polar GaN MISHEMTs Grown by MOCVD on SiC Substrates Using an $\hbox{Al}_{2}\hbox{O}_{3}$ Etch-Stop Technology

(2011) Seshadri Kolluri et al.   IEEE ELECTRON DEVICE LETTERS

N-Polar III–Nitride Green (540 nm) Light Emitting Diode

(2011) Fatih Akyol et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks

(2011) A. Bengoechea-Encabo et al.   JOURNAL OF CRYSTAL GROWTH

Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography

(2011) A. Bengoechea-Encabo et al.   JOURNAL OF CRYSTAL GROWTH

Selective-area catalyst-free MBE growth of GaN nanowires using a patterned oxide layer

(2011) T Schumann et al.   NANOTECHNOLOGY

Polarity of GaN nanowires grown by plasma-assisted molecular beam epitaxy on Si(111)

(2011) Karine Hestroffer et al.   PHYSICAL REVIEW B

Controlled Nucleation of GaN Nanowires Grown with Molecular Beam Epitaxy

(2010) Kris A. Bertness et al.   ADVANCED FUNCTIONAL MATERIALS

Molecular beam epitaxy of N-polar InGaN

(2010) Digbijoy N. Nath et al.   APPLIED PHYSICS LETTERS

Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition

(2010) S. Keller et al.   APPLIED PHYSICS LETTERS

Control of surface adatom kinetics for the growth of high-indium content InGaN throughout the miscibility gap

(2010) Michael Moseley et al.   APPLIED PHYSICS LETTERS

Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth

(2010) Sansaptak Dasgupta et al.   APPLIED PHYSICS LETTERS

Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate

(2010) Hiroto Sekiguchi et al.   APPLIED PHYSICS LETTERS

205-GHz (Al,In)N/GaN HEMTs

(2010) Haifeng Sun et al.   IEEE ELECTRON DEVICE LETTERS

Enhancement-Mode N-Polar GaN MISFETs With Self-Aligned Source/Drain Regrowth

(2010) Uttam Singisetti et al.   IEEE ELECTRON DEVICE LETTERS

N-face GaN nanorods: Continuous-flux MOVPE growth and morphological properties

(2010) W. Bergbauer et al.   JOURNAL OF CRYSTAL GROWTH

Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells

(2010) W Bergbauer et al.   NANOTECHNOLOGY

InGaN/GaN multiple quantum well solar cells with long operating wavelengths

(2009) R. Dahal et al.   APPLIED PHYSICS LETTERS

Mechanism of compositional modulations in epitaxial InAlN films grown by molecular beam epitaxy

(2009) S.-L. Sahonta et al.   APPLIED PHYSICS LETTERS

Periodic supply of indium as surfactant for N-polar InN growth by plasma-assisted molecular-beam epitaxy

(2009) Yong-Zhao Yao et al.   APPLIED PHYSICS LETTERS

Growth of high quality N-polar AlN(0001¯) on Si(111) by plasma assisted molecular beam epitaxy

(2009) Sansaptak Dasgupta et al.   APPLIED PHYSICS LETTERS

Reduction of dislocation density in epitaxial GaN layers by overgrowth of defect-related etch pits

(2009) J. L. Weyher et al.   APPLIED PHYSICS LETTERS

Electrical properties of N-polar AlGaN/GaN high electron mobility transistors grown on SiC by metalorganic chemical vapor deposition

(2009) David F. Brown et al.   APPLIED PHYSICS LETTERS

Growth and characterization of N-polar and In-polar InN films by RF-MBE

(2009) T. Yamaguchi et al.   JOURNAL OF CRYSTAL GROWTH

Prospects for LED lighting

(2009) Siddha Pimputkar et al.   Nature Photonics

Ti-mask Selective-Area Growth of GaN by RF-Plasma-Assisted Molecular-Beam Epitaxy for Fabricating Regularly Arranged InGaN/GaN Nanocolumns

(2008) Hiroto Sekiguchi et al.   Applied Physics Express

Selective-Area Growth of GaN Nanocolumns on Si(111) Substrates Using Nitrided Al Nanopatterns by RF-Plasma-Assisted Molecular-Beam Epitaxy

(2008) Shunsuke Ishizawa et al.   Applied Physics Express

N-Face Metal–Insulator–Semiconductor High-Electron-Mobility Transistors With AlN Back-Barrier

(2008) Man Hoi Wong et al.   IEEE ELECTRON DEVICE LETTERS

Enhanced Output Power of GaN-Based LEDs With Nano-Patterned Sapphire Substrates

(2008) J. J. Chen et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Effect of polarity on the growth of InN films by metalorganic chemical vapor deposition

(2008) Abhishek Jain et al.   JOURNAL OF APPLIED PHYSICS

Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition

(2008) S. Keller et al.   JOURNAL OF APPLIED PHYSICS

Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures

(2008) S. Keller et al.   JOURNAL OF APPLIED PHYSICS

Growth and characterization of N-polar GaN films on SiC by metal organic chemical vapor deposition

(2008) David F. Brown et al.   JOURNAL OF APPLIED PHYSICS

Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition

(2008) N.A. Fichtenbaum et al.   JOURNAL OF CRYSTAL GROWTH

Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays

(2008) Katsumi Kishino et al.   JOURNAL OF CRYSTAL GROWTH

GaN-Based RF Power Devices and Amplifiers

(2008) U.K. Mishra et al.   PROCEEDINGS OF THE IEEE