期刊
NANO LETTERS
卷 15, 期 2, 页码 1117-1121出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl504099s
关键词
GaN nanowires; molecular beam epitaxy; selective area growth; formation mechanism; morphological evolution
类别
资金
- EU FP7 Contract [GECCO 280694-2]
This work provides experimental evidence and theoretical explanations regarding the formation mechanisms of GaN nanowires grown by selective area growth on GaN-on-sapphire templates. The first growth stage, driven by selective area growth kinetics, consists of initial nucleation (along the nanohole inner periphery), coalescence onset and full coalescence, producing a single nanocrystal within each nanohole. In the second growth stage, driven by free-surface-energy minimization, the formed nanocrystal undergoes morphological evolution, exhibiting initial cylindrical-like shape, intermediate dodecagonal shape and a final, thermodynamically stable hexagonal shape. From this point on, the nanowire vertical growth proceeds while keeping the stable hexagonal form.
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