Self-Aligned N-Polar GaN/InAlN MIS-HEMTs With Record Extrinsic Transconductance of 1105 mS/mm

Growth, Structural, and Electrical Characterizations of N-Polar InAlN by Plasma-Assisted Molecular Beam Epitaxy

(2011) Sansaptak Dasgupta et al.   Applied Physics Express

X-band power performance of N-face GaN MIS-HEMTs

(2011) M.H. Wong et al.   ELECTRONICS LETTERS

N-Polar GaN/AlN MIS-HEMT With $f_{\rm MAX}$ of 204 GHz for Ka-Band Applications

(2011) Nidhi et al.   IEEE ELECTRON DEVICE LETTERS

Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth

(2010) Sansaptak Dasgupta et al.   APPLIED PHYSICS LETTERS

N-Polar GaN/AlN MIS-HEMT for Ka-Band Power Applications

(2010) Nidhi et al.   IEEE ELECTRON DEVICE LETTERS

N-Polar InAlN/AlN/GaN MIS-HEMTs

(2010) David F Brown et al.   IEEE ELECTRON DEVICE LETTERS

205-GHz (Al,In)N/GaN HEMTs

(2010) Haifeng Sun et al.   IEEE ELECTRON DEVICE LETTERS

Self-Aligned Technology for N-Polar GaN/Al(Ga)N MIS-HEMTs

(2010) Nidhi et al.   IEEE ELECTRON DEVICE LETTERS