Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition

Smooth N-polar GaN films and GaN/AlGaN/GaN heterostructures with properties comparable to Ga-polar GaN-on-silicon films were grown by metal organic chemical vapor deposition on (111) silicon substrates with a misorientation angle of 3.5 degrees toward the [11 (2) over bar] direction. For heterostructures with a sheet electron density of 9 x 10(12) cm(-2) an electron mobility of 1500 cm(2)/V s was derived for transport parallel to the surface steps which formed as a result of the substrate misorientation. (C) 2010 American Institute of Physics. [doi:10.1063/1.3499428]