标题
Polarity of GaN nanowires grown by plasma-assisted molecular beam epitaxy on Si(111)
作者
关键词
-
出版物
PHYSICAL REVIEW B
Volume 84, Issue 24, Pages -
出版商
American Physical Society (APS)
发表日期
2011-12-08
DOI
10.1103/physrevb.84.245302
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- On the polarity of GaN micro- and nanowires epitaxially grown on sapphire (0001) and Si(111) substrates by metal organic vapor phase epitaxy and ammonia-molecular beam epitaxy
- (2011) B. Alloing et al. APPLIED PHYSICS LETTERS
- Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy
- (2011) F. Limbach et al. JOURNAL OF APPLIED PHYSICS
- Structural and optical properties of InGaN/GaN nanowire heterostructures grown by PA-MBE
- (2011) G Tourbot et al. NANOTECHNOLOGY
- Scanning transmission electron microscopy investigation of the Si(111)/AlN interface grown by metalorganic vapor phase epitaxy
- (2010) G. Radtke et al. APPLIED PHYSICS LETTERS
- Homoepitaxial growth of catalyst-free GaN wires on N-polar substrates
- (2010) X. J. Chen et al. APPLIED PHYSICS LETTERS
- Direct comparison of catalyst-free and catalyst-induced GaN nanowires
- (2010) Caroline Chèze et al. Nano Research
- Multicolour luminescence from InGaN quantum wells grown over GaN nanowire arrays by molecular-beam epitaxy
- (2010) R Armitage et al. NANOTECHNOLOGY
- The structural properties of GaN/AlN core–shell nanocolumn heterostructures
- (2010) K Hestroffer et al. NANOTECHNOLOGY
- Stark effect in GaN/AlN nanowire heterostructures: Influence of strain relaxation and surface states
- (2010) D. Camacho Mojica et al. PHYSICAL REVIEW B
- Nucleation mechanism of GaN nanowires grown on (111) Si by molecular beam epitaxy
- (2009) O Landré et al. NANOTECHNOLOGY
- Evidence for quantum-confined Stark effect in GaN/AlN quantum dots in nanowires
- (2009) J. Renard et al. PHYSICAL REVIEW B
- Plasma-assisted molecular beam epitaxy growth of GaN nanowires using indium-enhanced diffusion
- (2008) O. Landré et al. APPLIED PHYSICS LETTERS
- Defect reduction in GaN/(0001)sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers
- (2008) D. Cherns et al. APPLIED PHYSICS LETTERS
- Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping
- (2008) Florian Furtmayr et al. JOURNAL OF APPLIED PHYSICS
- Facet and in-plane crystallographic orientations of GaN nanowires grown on Si(111)
- (2008) L Largeau et al. NANOTECHNOLOGY
- Fundamental limits to power consumption of LC subthreshold oscillators
- (2007) S. Di Pascoli ELECTRONICS LETTERS
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