Growth, Structural, and Electrical Characterizations of N-Polar InAlN by Plasma-Assisted Molecular Beam Epitaxy

N-polar In(x)Al(1-x)N (0: 02 < x < 0: 65) films were grown and characterized by plasma-assisted molecular beam epitaxy (PAMBE). Indium incorporation in the films was characterized both as a function of the impinging In and Al flux and the growth temperature. In incorporation in the film was found to decrease with increasing growth temperature (T(gr)) for T(gr) > 560 degrees C. A smooth surface morphology was obtained for In(0.18)Al(0.82)N lattice-matched to GaN. Subsequently, N-polar In(0.18)Al(0.82)N was used as a charge-inducing barrier in a N-polar GaN HEMT structure and electrical characterizations including current-voltage (I-V) measurements were performed. (C) 2011 The Japan Society of Applied Physics