期刊
IEEE ELECTRON DEVICE LETTERS
卷 33, 期 1, 页码 44-46出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2173458
关键词
C-band; GaN; high-electron-mobility transistor (HEMT); metal-organic chemical vapor deposition (MOCVD); N-polar; X-band
资金
- Office of Naval Research MINE
This letter presents the RF power performance of N-polar AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) grown by metal-organic chemical vapor deposition (MOCVD) on semi-insulating SiC substrates at 10 and 4 GHz. Additionally, an Al2O3-based etch-stop technology was demonstrated for improving the manufacturability of N-polar GaN HEMTs with SixNy passivation. The reported output power densities of 16.7 W/mm at 10 GHz and 20.7 W/mm at 4 GHz represent the highest reported values so far for an N-polar device, at both of these frequencies. The improvements achieved in the RF output power density when compared with previously reported N-polar MISHEMTs can be attributed to high breakdown voltage of N-polar devices grown by MOCVD and high thermal conductivity of the SiC substrate.
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