期刊
IEEE ELECTRON DEVICE LETTERS
卷 32, 期 5, 页码 617-619出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2111352
关键词
AlGaN back barrier; current gain cutoff frequency (f(T)); drain-induced barrier lowering (DIBL); GaN; high-electron-mobility transistor (HEMT); InAlN; output resistance
资金
- Defense Advanced Research Projects Agency NEXT program
- National Science Foundation
- Office of Naval Research
- Samsung
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [846628] Funding Source: National Science Foundation
This letter studies the effect of AlGaN back barriers in the dc and RF performance of In0.17Al0.83N/GaN high-electron mobility transistors grown on SiC substrates. When compared to conventional structures without a back barrier, the back barrier effectively prevents the degradation of drain-induced barrier lowering and significantly improves the output resistance in sub-100-nm-gate-length devices. The reduction in short-channel effects helps to increase the frequency performance of AlGaN back-barrier devices. For a 65-nm gate length, the current gain cutoff frequency (f(T)) of a transistor with an AlGaN back barrier is 210 GHz, which is higher than that of the standard device with the same gate length (f(T) = 195 GHz).
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