期刊
JOURNAL OF CRYSTAL GROWTH
卷 353, 期 1, 页码 1-4出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2011.11.069
关键词
Nanostructures; Molecular beam epitaxy; Selective epitaxy; Nitrides
资金
- MICINN Consolider [CSD2006-19, CSD2009-00013]
- UE CP-IP [228999-2 (SMASH)]
- [CAMP2009/ESP-1503]
- [MICINN-PLE2009-0023]
- [MICINN-MAT-2008-04815]
- [MAT2010-16407]
Selective area growth of a-plane GaN nanocolumns by molecular beam epitaxy was performed for the first time on a-plane GaN templates. Ti masks with 150 nm diameter nanoholes were fabricated by colloidal lithography, an easy, fast and cheap process capable to handle large areas. Even though colloidal lithography does not provide a perfect geometrical arrangement like e-beam lithography, it produces a very homogeneous mask in terms of nanohole diameter and density, and is used here for the first time for the selective area growth of GaN. Selective area growth of a-plane GaN nanocolumns is compared, in terms of anisotropic lateral and vertical growth rates, with GaN nanocolumns grown selectively on the c-plane. (C) 2012 Published by Elsevier B.V.
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