Promises and prospects of two-dimensional transistors

Heterogeneous integration of single-crystalline complex-oxide membranes

(2020) Hyun S. Kum et al.   NATURE

Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111)

(2020) Tse-An Chen et al.   NATURE

Thickness-controlled black phosphorus tunnel field-effect transistor for low-power switches

(2020) Seungho Kim et al.   Nature Nanotechnology

Transient hot-carrier dynamics and intrinsic velocity saturation in monolayer MoS2

(2020) J. Nathawat et al.   Physical Review Materials

General synthesis of two-dimensional van der Waals heterostructure arrays

(2020) Jia Li et al.   NATURE

Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors

(2019) Yan Wang et al.   NATURE

Van der Waals integration before and beyond two-dimensional materials

(2019) Yuan Liu et al.   NATURE

van der Waals Epitaxial Growth of Atomically Thin 2D Metals on Dangling‐Bond‐Free WSe 2 and WS 2

(2019) Ruixia Wu et al.   ADVANCED FUNCTIONAL MATERIALS

A Fermi‐Level‐Pinning‐Free 1D Electrical Contact at the Intrinsic 2D MoS 2 –Metal Junction

(2019) Zheng Yang et al.   ADVANCED MATERIALS

Epitaxial growth of a 100-square-centimetre single-crystal hexagonal boron nitride monolayer on copper

(2019) Li Wang et al.   NATURE

Integrating graphene into semiconductor fabrication lines

(2019) Daniel Neumaier et al.   NATURE MATERIALS

Disorder in van der Waals heterostructures of 2D materials

(2019) Daniel Rhodes et al.   NATURE MATERIALS

Fractal‐Theory‐Based Control of the Shape and Quality of CVD‐Grown 2D Materials

(2019) Junzhu Li et al.   ADVANCED MATERIALS

High-speed black phosphorus field-effect transistors approaching ballistic limit

(2019) Xuefei Li et al.   Science Advances

Graphene and two-dimensional materials for silicon technology

(2019) Deji Akinwande et al.   NATURE

Ultra-scaled MoS2 transistors and circuits fabricated without nanolithography

(2019) Kishan Ashokbhai Patel et al.   2D Materials

Large-Velocity Saturation in Thin-Film Black Phosphorus Transistors

(2018) Xiaolong Chen et al.   ACS Nano

Few-Layer GeAs Field-Effect Transistors and Infrared Photodetectors

(2018) Jian Guo et al.   ADVANCED MATERIALS

14-nm FinFET Technology for Analog and RF Applications

(2018) Jagar Singh et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Via Method for Lithography Free Contact and Preservation of 2D Materials

(2018) Evan J. Telford et al.   NANO LETTERS

High-Field Transport and Velocity Saturation in Synthetic Monolayer MoS2

(2018) Kirby K. H. Smithe et al.   NANO LETTERS

Air-Stable Room-Temperature Mid-Infrared Photodetectors Based on hBN/Black Arsenic Phosphorus/hBN Heterostructures

(2018) Shaofan Yuan et al.   NANO LETTERS

Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions

(2018) Yuan Liu et al.   NATURE

High-Performance InSe Transistors with Ohmic Contact Enabled by Nonrectifying Barrier-Type Indium Electrodes

(2018) Yu-Ting Huang et al.   ACS Applied Materials & Interfaces

Thickness-Dependent Carrier Transport Characteristics of a New 2D Elemental Semiconductor: Black Arsenic

(2018) Mianzeng Zhong et al.   ADVANCED FUNCTIONAL MATERIALS

Two-dimensional transistors beyond graphene and TMDCs

(2018) Yuan Liu et al.   CHEMICAL SOCIETY REVIEWS

What Limits the Intrinsic Mobility of Electrons and Holes in Two Dimensional Metal Dichalcogenides?

(2018) Long Cheng et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Bi2OS2: A Direct-Gap Two-dimensional Semiconductor with High Carrier Mobility and Surface Electron States

(2018) Xiwen Zhang et al.   Materials Horizons

Epitaxial Growth of Two-Dimensional Metal–Semiconductor Transition-Metal Dichalcogenide Vertical Stacks (VSe2/MX2) and Their Band Alignments

(2018) Zhepeng Zhang et al.   ACS Nano

Mobility Deception in Nanoscale Transistors: An Untold Contact Story

(2018) Joseph R. Nasr et al.   ADVANCED MATERIALS

Wafer-scale single-crystal hexagonal boron nitride film via self-collimated grain formation

(2018) Joo Song Lee et al.   SCIENCE

Vertical Charge Transport and Negative Transconductance in Multilayer Molybdenum Disulfides

(2017) Yuan Liu et al.   NANO LETTERS

Energy Dissipation in Monolayer MoS2 Electronics

(2017) Eilam Yalon et al.   NANO LETTERS

Low-Temperature Ohmic Contact to Monolayer MoS2 by van der Waals Bonded Co/h-BN Electrodes

(2017) Xu Cui et al.   NANO LETTERS

Highly-anisotropic optical and electrical properties in layered SnSe

(2017) Shengxue Yang et al.   Nano Research

Layer-by-layer assembly of two-dimensional materials into wafer-scale heterostructures

(2017) Kibum Kang et al.   NATURE

Critical assessment of charge mobility extraction in FETs

(2017) Hyun Ho Choi et al.   NATURE MATERIALS

Elastic, electronic, and dielectric properties of bulk and monolayer ZrS2 , ZrSe2 , HfS2 , HfSe2 from van der Waals density-functional theory

(2017) Qiyi Zhao et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Electron transport in some transition metal di-chalcogenides: MoS2 and WS2

(2017) D K Ferry   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Device Physics of Contact Issues for the Overestimation and Underestimation of Carrier Mobility in Field-Effect Transistors

(2017) Chuan Liu et al.   Physical Review Applied

HfSe 2 and ZrSe 2 : Two-dimensional semiconductors with native high-κ oxides

(2017) Michal J. Mleczko et al.   Science Advances

Monolithic 3D CMOS Using Layered Semiconductors

(2016) Angada B. Sachid et al.   ADVANCED MATERIALS

High-Electron-Mobility and Air-Stable 2D Layered PtSe2FETs

(2016) Yuda Zhao et al.   ADVANCED MATERIALS

High-Performance 2D Rhenium Disulfide (ReS2) Transistors and Photodetectors by Oxygen Plasma Treatment

(2016) Jaewoo Shim et al.   ADVANCED MATERIALS

Extraordinarily Strong Interlayer Interaction in 2D Layered PtS2

(2016) Yuda Zhao et al.   ADVANCED MATERIALS

Synthesis and Characterization of ReS2 and ReSe2 Layered Chalcogenide Single Crystals

(2016) Bhakti Jariwala et al.   CHEMISTRY OF MATERIALS

Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors

(2016) Hsun-Jen Chuang et al.   NANO LETTERS

Pushing the Performance Limit of Sub-100 nm Molybdenum Disulfide Transistors

(2016) Yuan Liu et al.   NANO LETTERS

Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition

(2016) Chris D. English et al.   NANO LETTERS

The intrinsic origin of hysteresis in MoS2field effect transistors

(2016) Jiapei Shu et al.   Nanoscale

The chips are down for Moore’s law

(2016) M. Mitchell Waldrop   NATURE

High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe

(2016) Denis A. Bandurin et al.   Nature Nanotechnology

MoS2 transistors with 1-nanometer gate lengths

(2016) S. B. Desai et al.   SCIENCE

Mobility overestimation due to gated contacts in organic field-effect transistors

(2016) Emily G. Bittle et al.   Nature Communications

Intrinsic electrical transport and performance projections of synthetic monolayer MoS2devices

(2016) Kirby K H Smithe et al.   2D Materials

Van der Waals heterostructures and devices

(2016) Yuan Liu et al.   Nature Reviews Materials

Two-dimensional semiconductors for transistors

(2016) Manish Chhowalla et al.   Nature Reviews Materials

Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier

(2016) Y. Liu et al.   Science Advances

Red-to-Ultraviolet Emission Tuning of Two-Dimensional Gallium Sulfide/Selenide

(2015) Chan Su Jung et al.   ACS Nano

Dual-Gated MoS2/WSe2 van der Waals Tunnel Diodes and Transistors

(2015) Tania Roy et al.   ACS Nano

Performance Potential and Limit of MoS2Transistors

(2015) Xuefei Li et al.   ADVANCED MATERIALS

Lateral Growth of Composition Graded Atomic Layer MoS2(1–x)Se2x Nanosheets

(2015) Honglai Li et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Toward Barrier Free Contact to Molybdenum Disulfide Using Graphene Electrodes

(2015) Yuan Liu et al.   NANO LETTERS

Esaki Diodes in van der Waals Heterojunctions with Broken-Gap Energy Band Alignment

(2015) Rusen Yan et al.   NANO LETTERS

Synthesis of WS2xSe2–2x Alloy Nanosheets with Composition-Tunable Electronic Properties

(2015) Xidong Duan et al.   NANO LETTERS

Two-dimensional transition metal dichalcogenide alloys: preparation, characterization and applications

(2015) L. M. Xie   Nanoscale

A subthermionic tunnel field-effect transistor with an atomically thin channel

(2015) Deblina Sarkar et al.   NATURE

High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity

(2015) Kibum Kang et al.   NATURE

Electrical contacts to two-dimensional semiconductors

(2015) Adrien Allain et al.   NATURE MATERIALS

Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform

(2015) Xu Cui et al.   Nature Nanotechnology

Silicene field-effect transistors operating at room temperature

(2015) Li Tao et al.   Nature Nanotechnology

Phase patterning for ohmic homojunction contact in MoTe2

(2015) S. Cho et al.   SCIENCE

High-mobility and air-stable single-layer WS2 field-effect transistors sandwiched between chemical vapor deposition-grown hexagonal BN films

(2015) M Waqas Iqbal et al.   Scientific Reports

Low Resistance Metal Contacts to MoS2 Devices with Nickel-Etched-Graphene Electrodes

(2014) Wei Sun Leong et al.   ACS Nano

A Compact Current–Voltage Model for 2D Semiconductor Based Field-Effect Transistors Considering Interface Traps, Mobility Degradation, and Inefficient Doping Effect

(2014) Wei Cao et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Air-Stable Surface Charge Transfer Doping of MoS2 by Benzyl Viologen

(2014) Daisuke Kiriya et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2

(2014) Lingming Yang et al.   NANO LETTERS

Layer-dependent electrical and optoelectronic responses of ReSe2 nanosheet transistors

(2014) Shengxue Yang et al.   Nanoscale

Phase-engineered low-resistance contacts for ultrathin MoS2 transistors

(2014) Rajesh Kappera et al.   NATURE MATERIALS

Atomic mechanism of the semiconducting-to-metallic phase transition in single-layered MoS2

(2014) Yung-Chang Lin et al.   Nature Nanotechnology

Black phosphorus field-effect transistors

(2014) Likai Li et al.   Nature Nanotechnology

Intrinsic transport properties of electrons and holes in monolayer transition-metal dichalcogenides

(2014) Zhenghe Jin et al.   PHYSICAL REVIEW B

Layer-controlled band gap and anisotropic excitons in few-layer black phosphorus

(2014) Vy Tran et al.   PHYSICAL REVIEW B

Wafer-Scale Growth of Single-Crystal Monolayer Graphene on Reusable Hydrogen-Terminated Germanium

(2014) J.-H. Lee et al.   SCIENCE

Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors

(2013) Wei Liu et al.   NANO LETTERS

Thermal Conductivity and Phonon Transport in Suspended Few-Layer Hexagonal Boron Nitride

(2013) Insun Jo et al.   NANO LETTERS

Van der Waals heterostructures

(2013) A. K. Geim et al.   NATURE

Tunneling Transistors Based on Graphene and 2-D Crystals

(2013) Debdeep Jena   PROCEEDINGS OF THE IEEE

One-Dimensional Electrical Contact to a Two-Dimensional Material

(2013) L. Wang et al.   SCIENCE

Channel Length Scaling of MoS2 MOSFETs

(2012) Han Liu et al.   ACS Nano

Hysteresis in Single-Layer MoS2 Field Effect Transistors

(2012) Dattatray J. Late et al.   ACS Nano

Assessment of Electron Mobility in Ultrathin-Body InGaAs-on-Insulator MOSFETs Using Physics-Based Modeling

(2012) Mirko Poljak et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te)

(2012) Won Seok Yun et al.   PHYSICAL REVIEW B

High-frequency self-aligned graphene transistors with transferred gate stacks

(2012) R. Cheng et al.   PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

(2011) Isabelle Ferain et al.   NATURE

Tunnel field-effect transistors as energy-efficient electronic switches

(2011) Adrian M. Ionescu et al.   NATURE

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Sub-100 nm Channel Length Graphene Transistors

(2010) Lei Liao et al.   NANO LETTERS

High-speed graphene transistors with a self-aligned nanowire gate

(2010) Lei Liao et al.   NATURE

Roll-to-roll production of 30-inch graphene films for transparent electrodes

(2010) Sukang Bae et al.   Nature Nanotechnology

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

High-  oxide nanoribbons as gate dielectrics for high mobility top-gated graphene transistors

(2010) L. Liao et al.   PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

Utilization of a Buffered Dielectric to Achieve High Field-Effect Carrier Mobility in Graphene Transistors

(2009) Damon B. Farmer et al.   NANO LETTERS

Mobility extraction in SOI MOSFETs with sub 1nm body thickness

(2009) M. Schmidt et al.   SOLID-STATE ELECTRONICS