期刊
NANO LETTERS
卷 18, 期 7, 页码 4516-4522出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.8b01692
关键词
MoS2; 2D materials; chemical vapor deposition (CVD); saturation velocity; transfer length method; high-field transport
类别
资金
- Air Force Office of Scientific Research (AFOSR) [FA9550-14-1-0251]
- National Science Foundation (NSF) EFRI 2-DARE [1542883]
- NCN-NEEDS program
- NSF [1227020-EEC]
- Semiconductor Research Corporation (SRC)
- Stanford SystemX Alliance
- Stanford Graduate Fellowship (SGF) program
- NSF Graduate Research Fellowship [DGE-114747]
Two-dimensional semiconductors such as monolayer MoS2 are of interest for future applications including flexible electronics and end-of-roadmap technologies. Most research to date has focused on low-field mobility, but the peak current-driving ability of transistors is limited by the high-field saturation drift velocity, v(sat). Here, we measure high-field transport as a function of temperature for the first time in high-quality synthetic monolayer MoS2. We find that in typical device geometries (e.g. on SiO2 substrates) self-heating can significantly reduce current drive during high-field operation. However, with measurements at varying ambient temperature (from 100 to 300 K), we extract electron v(sat) = (3.4 +/- 0.4) x 10(6) cm/s at room temperature in this three-atom-thick semiconductor, which we benchmark against other bulk and layered materials. With these results, we estimate that the saturation current in monolayer MoS2 could exceed 1 mA/mu m at room temperature, in digital circuits with near-ideal thermal management.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据