Correction
Engineering, Electrical & Electronic
J. F. Cheng, X. Li, X. M. Shao, T. Li, Y. J. Ma, Y. Gu, S. Y. Deng, Y. G. Zhang, H. M. Gong
Summary: The above article discusses the affiliations of the authors.
IEEE PHOTONICS TECHNOLOGY LETTERS
(2022)
Article
Engineering, Aerospace
Marcus Birch, Jamie Soon, Tony Travouillon, Trevor Mendel, Brian Taylor, Blaise C. Kuo Tiong
Summary: An indium-gallium-arsenide (InGaAs) detector was tested for its potential use in the new Dynamic REd All-sky Monitoring Survey (DREAMS) 0.5-m telescope. The detector showed low dark currents and no fringing or non-linearity issues, making it suitable for low-angular-resolution NIR instruments.
JOURNAL OF ASTRONOMICAL TELESCOPES INSTRUMENTS AND SYSTEMS
(2022)
Article
Engineering, Electrical & Electronic
Tomohiro Akazawa, Dongrui Wu, Kei Sumita, Naoki Sekine, Makoto Okano, Kasidit Toprasertpong, Shinichi Takagi, Mitsuru Takenaka
Summary: Optical interconnects have great potential for future short-distance communications due to their ability to overcome the limitations in bandwidth and energy consumption of electrical interconnects. This article proposes a silicon hybrid photodetector with an ultrathin InGaAs membrane based on a slot waveguide, which achieves low capacitance and high responsivity.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Computer Science, Information Systems
Ahid S. Hajo, Sascha Preu, Leonid Kochkurov, Thomas Kusserow, Oktay Yilmazoglu
Summary: This study investigates fully integrated THz detectors using silver NWs as bridge contacts on highly doped GaAs and InGaAs layers, achieving improved performance at zero bias with a maximum cut-off frequency of 2.6 THz. Initial THz measurements suggest a responsivity of 0.81 A/W and low NEP value of 7 pW/root Hz at 1 THz.
Article
Engineering, Electrical & Electronic
Zilu Guo, Wenjuan Wang, Yangjun Li, Huidan Qu, Liuyan Fan, Xiren Chen, Yicheng Zhu, Yue Gu, Yajie Wang, Changlin Zheng, Pingping Chen, Wei Lu
Summary: This article investigates the material properties of an In0.53Ga0.47As/indium phosphide (InP) avalanche photodiode (APD) grown on an InP substrate using molecular beam epitaxy (MBE). The material is analyzed using X-ray diffraction (XRD), photoluminescence (PL), and scanning transmission electron microscopy. The study reveals that the dark current of the APD is dominated by the generation-recombination (G-R) process and that there exists a deep energy level defect in the InGaAs absorber layer, possibly caused by inadequate MBE growth conditions.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Crystallography
Stephanie Tomasulo, Margaret A. Stevens, Jill A. Nolde, Nicole A. Kotulak, Michael K. Yakes
Summary: We investigated droplet epitaxy of Ga(As) on In0.53Ga0.47As and found an unexpected morphology of etched pits, tracks, and mounds instead of the dot and halo structure. Varying growth conditions revealed that the irregular morphology arose from competing diffusion lengths of In and Ga adatoms in Ga-rich conditions. Additionally, co-deposition experiments showed that In and Ga cannot form an alloyed droplet under the explored growth conditions, suggesting the possibility of self-segregation and phase separation.
JOURNAL OF CRYSTAL GROWTH
(2022)
Article
Engineering, Electrical & Electronic
Wei He, Xiumei Shao, Yingjie Ma, Xue Li, Haimei Gong
Summary: The design and fabrication of InP Mie resonators as a broadband anti-reflection coating for InGaAs/InP FPA sensors have been reported in this work. The optimized structure of InP resonators showed a reflectivity lower than 5% over the entire spectrum of 900 - 1650 nm. The measurements of blackbody response signal, noise, and quantum efficiency demonstrated a 16.7% improvement of the peak responsivity in the structured area, highlighting the promising prospect of this design in the application of InGaAs sensors and other spectral domain detectors.
IEEE PHOTONICS TECHNOLOGY LETTERS
(2022)
Article
Chemistry, Multidisciplinary
Sergey V. Balakirev, Natalia E. Chernenko, Mikhail M. Eremenko, Oleg A. Ageev, Maxim S. Solodovnik
Summary: This study proposes a new approach to control the size of nanostructures formed by droplet epitaxy using ultra-low group-V flux. It demonstrates that larger droplets can be reduced to stable, small-sized nanostructures suitable for quantum dot applications, while smaller droplets are unstable and difficult to control. The research expands the capabilities of droplet epitaxy by observing phenomena related to the transformation of droplets into dots, rings, and holes under specific growth conditions.
Article
Materials Science, Multidisciplinary
C. Rittmann, M. Yu Petrov, A. N. Kamenskii, K. Kavokin, A. Yu Kuntsevich, Yu P. Efimov, S. A. Eliseev, M. Bayer, A. Greilich
Summary: The implications of a small indium content (3%) in a GaAs epilayer on the electron and nuclear spin relaxation are discussed, focusing on the enhanced quadrupolar effects induced by strain. Using weakly perturbative spin noise spectroscopy, the electron spin relaxation dynamics without explicit excitation is studied. Localized states with increased interaction with surrounding nuclear spins are observed, and time-resolved spin noise spectroscopy is applied to study the relaxation dynamics of the optically pumped nuclear spin system. The results show a multi-exponential decay with time components ranging from several seconds to hundreds of seconds. Furthermore, the concentration of localized carrier states and the nuclear spin diffusion constant characteristic for this system are estimated using the nuclear spin diffusion model.
Article
Engineering, Electrical & Electronic
Emona Datta, Avik Chattopadhyay, Abhijit Mallik
Summary: This study investigates the analog performance of both symmetric and asymmetric InGaAs n-channel MOSFETs at elevated temperatures. It is found that asymmetric devices outperform symmetric devices in terms of both linearity and distortion characteristics. Additionally, a comparison with similarly sized Si devices shows that while Si devices exhibit better linearity at high temperatures, InGaAs devices have an edge in terms of distortion.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Kei Sumita, Kasidit Toprasertpong, Mitsuru Takenaka, Shinichi Takagi
Summary: The combination of (111) surface orientation and UTB InAs-OI structures can confine electrons strongly, transferring them to the L valley with heavier effective mass m(z) than in the Gamma valley, leading to higher semiconductor capacitance and suppression of thickness fluctuation scattering. Additionally, smart-cut and digital etching processes were used to successfully operate UTB (111) InAs-OI nMOS-FETs experimentally.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Hua-Lun Ko, Quang Ho Luc, Ping Huang, Jing-Yuan Wu, Si-Meng Chen, Nhan-Ai Tran, Heng-Tung Hsu, Edward Yi Chang
Summary: This article demonstrates improved subthreshold characteristics and reliability of sub-10 nm top width nanowire In0.53Ga0.47As gate-all-around (GAA) MOSFETs. The devices show significant improvement in subthreshold performances and effective control of short channel effects. Low degradation of subthreshold swing and threshold voltage shift is achieved under gate bias stress due to N-2 RP treatment. These results indicate that the developed GAA MOSFET devices have great potential for future low-power high-switching speed CMOS logic applications.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
(2022)
Article
Engineering, Electrical & Electronic
Hongwei Liu, Xinwei Wang, Pingjuan Niu, Philip Shields, Zanyun Zhang, Xiaoyun Li, Chao Liu, Duxiang Wang
Summary: The research shows that in the growth of InP/InGaAs/InP PIN photodetector material, controlling the diffusion depth of Zn doping in p-InP can affect the high frequency characteristics of the PIN photodiode, providing a new reference for the design of photodiodes and varactors in optical microwave mixed circuits.
IEEE PHOTONICS TECHNOLOGY LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Wu-Kang Kim, Pavlo Bidenko, Jongmin Kim, Jaeho Sim, Joon-Kyu Han, Seongkwang Kim, Dae-Myeong Geum, Sanghyeon Kim, Yang-Kyu Choi
Summary: A vertical bi-stable resistor (biristor) made of In0.53Ga0.47As demonstrated sub-1 V operation, with remarkable reduction in latch-up voltage due to its small bandgap and scaled base length of 150 nm. The epitaxially grown n-p-n structure allowed for an abrupt p-n junction, which was key in reducing the latch-up voltage. The physical mechanism of carrier transport in the InGaAs biristor was further explored through TCAD simulations.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Gangping Yan, Kai Xi, Gaobo Xu, Jinshun Bi, Huaxiang Yin
Summary: The study delves into SEEs in capacitor-less 1T-DRAM based on InGaAs-OI for the first time, focusing on the sensitivity of source and drain in the cells. The findings emphasize the importance of appropriate operation conditions and the impact of various factors on memory performance, offering insights for future space applications.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Physics, Applied
I. Berdalovic, M. Poljak, T. Suligoj
Summary: This paper presents a comprehensive numerical model for calculating carrier mobility within a 2D electron gas in AlGaN/GaN heterostructures, taking into account all relevant scattering mechanisms.
JOURNAL OF APPLIED PHYSICS
(2021)
Article
Engineering, Electrical & Electronic
Mirko Poljak, Mislav Matic, Ante Zeljko
Summary: Atomistic quantum transport device simulations were used to investigate the contact resistance in monoelemental 2D material nanoribbon MOSFETs with edge contacts. The study found that using moderately interacting metallic materials minimized RC, with the lowest RC values being around 150-430 Omega . mu m in graphene, silicene, germanene, and phosphorene nanodevices.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Chemistry, Physical
Mirko Poljak, Mislav Matic
Summary: The study reveals that metallization decreases transmission and conductance, and can either enlarge or diminish the transport gap depending on GNR dimensions. Additionally, 1D edge contacts and size engineering can be utilized to tune the R-C in GNRs to values lower than graphene.
Article
Chemistry, Physical
Mirko Poljak, Mislav Matic
Summary: Nanodevices based on monolayer black phosphorus or phosphorene show promise in high density integrated circuits. This study investigates the electronic and transport properties of phosphorene nanoribbons (PNRs) and the performance of ultra-scaled PNR field-effect transistors (FETs) using theoretical and computational approaches. The results reveal that reducing the nanoribbon width leads to a decrease in charge velocity, but optimal nanodevices that meet industry requirements can still be achieved within a certain range.
Correction
Chemistry, Physical
Mirko Poljak, Mislav Matic
Article
Chemistry, Multidisciplinary
Mirko Poljak, Mislav Matic, Tin Zupancic, Ante Zeljko
Summary: This study investigates the impact of edge contacts on the electronic and transport properties, as well as contact resistance, in phosphorene nanoribbons (PNRs) using atomistic quantum transport simulations. The results demonstrate that reducing the length of PNRs increases contact resistance due to strong metallization effects, while reducing the width decreases contact resistance. Furthermore, it is shown that choosing the appropriate edge contact metal can further decrease contact resistance.
Article
Engineering, Electrical & Electronic
Mirko Poljak, Mislav Matic, Ante Zeljko
Summary: Explored the dependence of contact resistance of graphene nanoribbon devices on contact geometry and found that wider graphene nanoribbons have lower contact resistance.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Electrical & Electronic
Ivan Berdalovic, Mirko Poljak, Tomislav Suligoj
Summary: In this article, the authors use a semiclassical low-field mobility modeling framework to study the effect of 2-D electron gas density on electron mobility in AlGaN/GaN high electron mobility transistors. They find that the polar optical phonon-limited mobility decreases with increasing density up to a critical density, above which there is a significant improvement in mobility contrary to typical behavior. This improvement is attributed to the interplay between ground-state energy and quasi-Fermi energy within the channel, suppressing intrasubband polar optical phonon emission at high densities.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Chemistry, Multidisciplinary
Mirko Poljak, Mislav Matic
Summary: We use quantum transport simulations based on non-equilibrium Green's functions to study the reduction of contact resistance in devices based on phosphorene nanoribbons. The effects of nanoribbon width scaling, different metal contact configurations, and metal-channel interaction strengths on the transfer length and contact resistance are investigated. We find that the choice of metals and contact lengths depend on nanoribbon width, and ultranarrow nanoribbons benefit from weakly interacting metals and long top contacts, resulting in minimal additional contact resistance.
Article
Engineering, Electrical & Electronic
Ivan Berdalovic, Mirko Poljak, Tomislav Suligoj
Summary: This article investigates the difference in mobility of two-dimensional electron gas (2DEG) between single-heterostructure (SH) and double-heterostructure (DH) AlGaN/GaN/(AlGaN) high electron mobility transistors (HEMTs), and analyzes the scattering mechanisms that limit the mobility in different device structures. By using numerical modeling and experimental validation, it is found that DH HEMTs exhibit superior mobility at high temperatures due to a decrease in polar optical phonon (POP) scattering rates caused by lower 2DEG density. On the other hand, the lower mobility in DH HEMTs compared to SH HEMTs may be attributed to stronger alloy scattering in structures without an AlN spacer layer or increased POP scattering in structures with a similar 2DEG density.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Mislav Matic, Mirko Poljak
Summary: Atomistic quantum transport simulations were used to study the electron injection velocity and ballistic performance of phosphorene nanoribbon field-effect transistors (FETs). The study found that the PNR bandstructure is not affected by quantum confinement effects, and gate bias can modulate the injection velocity for PNRs wider than 2.1 nm. Additionally, the PNR FETs exhibited high cut-off frequencies and acceptable bandgaps, making them suitable for future high-speed FETs.
SOLID-STATE ELECTRONICS
(2023)
Proceedings Paper
Engineering, Electrical & Electronic
Ivan Berdalovic, Mirko Poljak, Tomislav Suligoj
Summary: This paper investigates the performance and transport properties of different types of enhancement-mode gallium nitride high electron mobility transistors (HEMTs), comparing three different structures and analyzing the impact of different gate voltages on the mobility of 2D electron gas (2DEG) at different temperatures. The key scattering mechanisms are identified in the study.
2021 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM (BCICTS)
(2021)
Proceedings Paper
Engineering, Manufacturing
Mirko Poljak, Mislav Matic
Summary: This study introduces a new tight-binding model for investigating the electronic properties of phosphorene nanoribbons, based on ab initio density-functional theory calculations. The results show that this new model produces significantly different outcomes in terms of PNR FET performance compared to the commonly used model from literature.
2021 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2021)
(2021)
Proceedings Paper
Engineering, Electrical & Electronic
Mirko Poljak, Mislav Matic
2020 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2020)
(2020)
Article
Engineering, Electrical & Electronic
Mirko Poljak
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2020)
