标题
MoS2 transistors with 1-nanometer gate lengths
作者
关键词
-
出版物
SCIENCE
Volume 354, Issue 6308, Pages 99-102
出版商
American Association for the Advancement of Science (AAAS)
发表日期
2016-10-07
DOI
10.1126/science.aah4698
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- The Effects of Direct Source-to-Drain Tunneling and Variation in the Body Thickness on (100) and (110) Sub-10-nm Si Double-Gate Transistors
- (2015) Woo-Suhl Cho et al. IEEE ELECTRON DEVICE LETTERS
- A Compact Virtual-Source Model for Carbon Nanotube FETs in the Sub-10-nm Regime—Part II: Extrinsic Elements, Performance Assessment, and Design Optimization
- (2015) Chi-Shuen Lee et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- A subthermionic tunnel field-effect transistor with an atomically thin channel
- (2015) Deblina Sarkar et al. NATURE
- High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity
- (2015) Kibum Kang et al. NATURE
- Nanomaterials in transistors: From high-performance to thin-film applications
- (2015) A. D. Franklin SCIENCE
- Probing the electron states and metal-insulator transition mechanisms in molybdenum disulphide vertical heterostructures
- (2015) Xiaolong Chen et al. Nature Communications
- Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
- (2014) Deep Jariwala et al. ACS Nano
- Interface Engineering for High-Performance Top-Gated MoS2Field-Effect Transistors
- (2014) Xuming Zou et al. ADVANCED MATERIALS
- Electronic and thermoelectric properties of few-layer transition metal dichalcogenides
- (2014) Darshana Wickramaratne et al. JOURNAL OF CHEMICAL PHYSICS
- Atomically thin p–n junctions with van der Waals heterointerfaces
- (2014) Chul-Ho Lee et al. Nature Nanotechnology
- Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides
- (2014) H. Fang et al. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
- The valley Hall effect in MoS2 transistors
- (2014) K. F. Mak et al. SCIENCE
- On Monolayer ${\rm MoS}_{2}$ Field-Effect Transistors at the Scaling Limit
- (2013) Leitao Liu et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Quantum Confinement Effects in Transferrable Silicon Nanomembranes and Their Applications on Unusual Substrates
- (2013) Houk Jang et al. NANO LETTERS
- Channel Length Scaling of MoS2 MOSFETs
- (2012) Han Liu et al. ACS Nano
- Integrated Circuits Based on Bilayer MoS2 Transistors
- (2012) Han Wang et al. NANO LETTERS
- High Performance Multilayer MoS2 Transistors with Scandium Contacts
- (2012) Saptarshi Das et al. NANO LETTERS
- How Good Can Monolayer MoS2Transistors Be?
- (2011) Youngki Yoon et al. NANO LETTERS
- Single-layer MoS2 transistors
- (2011) B. Radisavljevic et al. Nature Nanotechnology
- Nanowire transistors without junctions
- (2010) Jean-Pierre Colinge et al. Nature Nanotechnology
- Atomically ThinMoS2: A New Direct-Gap Semiconductor
- (2010) Kin Fai Mak et al. PHYSICAL REVIEW LETTERS
- It's Time to Reinvent the Transistor!
- (2010) T. N. Theis et al. SCIENCE
- Wafer-Scale Growth and Transfer of Aligned Single-Walled Carbon Nanotubes
- (2009) N. Patil et al. IEEE TRANSACTIONS ON NANOTECHNOLOGY
- Quantum Size Effects on Dielectric Constants and Optical Absorption of Ultrathin Silicon Films
- (2008) Gang Zhang et al. IEEE ELECTRON DEVICE LETTERS
- Analysis of the Effects of Fringing Electric Field on FinFET Device Performance and Structural Optimization Using 3-D Simulation
- (2008) Hui Zhao et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- A Tight-Binding Study of the Ballistic Injection Velocity for Ultrathin-Body SOI MOSFETs
- (2008) Yang Liu et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- A carbon nanotube gated carbon nanotube transistor with 5 ps gate delay
- (2008) J Svensson et al. NANOTECHNOLOGY
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