期刊
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
卷 32, 期 8, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-6641/aa7472
关键词
electron transport; phonon scattering; devices; nanostructures
The transition metal di-chalcogenides are promising single monolayer materials that hold promise for applications in several fields, including nanoelectronics. Here, I study the transport of electrons in two of these materials, MoS2 and WS2. While the low-field behavior shows very low mobility, due mostly to impurity scattering, the high-field behavior shows a relatively high saturated velocity and a high breakdown field. Complications arise due to the relative narrowness of the conduction band, and the effect of this on the transport is discussed.
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