期刊
ACS NANO
卷 12, 期 5, 页码 5003-5010出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.8b02295
关键词
black phosphorus; drift velocity; saturation velocity; electron-impurity scattering; electron-phonon scattering; field-effect transistors
类别
资金
- Office of Naval Research Young Investigator Program (ONR-YIP)
- Yale Institute for Nanoscience and Quantum Engineering (YINQE)
- NSF MRSEC [DMR 1119826]
- Elemental Strategy Initiative
- CREST [JPMJCR15F3]
- Israel Science Foundation [1055/15]
A high saturation velocity semiconductor is appealing for applications in electronics and optoelectronics. Thin-film black phosphorus (BP), an emerging layered semiconductor, shows a high carrier mobility and strong mid-infrared photoresponse at room temperature. Here, we report the observation of high intrinsic saturation velocity in 7 to 11 rim thick BP for both electrons and holes as a function of charge-carrier density, temperature, and crystalline direction. We distinguish a drift velocity transition point due to the competition between the electron-impurity and electron phonon scatterings. We further achieve a room-temperature saturation velocity of 1.2 (1.0) X 10(7) cm s(-1) for hole (electron) carriers at a critical electric field of 14 (13) kV cm(-1), indicating current-gain cutoff frequency similar to 20 GHz center dot mu m for radio frequency applications. Moreover, the current density is as high as 580 mu A mu m(-1) at a low electric field of 10 kV cm(-1). Our studies demonstrate that thin-film BP outperforms silicon in terms of saturation velocity and critical field, revealing its great potential in radio-frequency electronics, high-speed mid-infrared photodetectors, and optical modulators.
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