标题
The intrinsic origin of hysteresis in MoS2field effect transistors
作者
关键词
-
出版物
Nanoscale
Volume 8, Issue 5, Pages 3049-3056
出版商
Royal Society of Chemistry (RSC)
发表日期
2016-01-06
DOI
10.1039/c5nr07336g
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Surface Defects on Natural MoS2
- (2015) Rafik Addou et al. ACS Applied Materials & Interfaces
- Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states
- (2015) Junjie Wang et al. APPLIED PHYSICS LETTERS
- Charge trapping at the MoS2-SiO2 interface and its effects on the characteristics of MoS2 metal-oxide-semiconductor field effect transistors
- (2015) Yao Guo et al. APPLIED PHYSICS LETTERS
- Exploring atomic defects in molybdenum disulphide monolayers
- (2015) Jinhua Hong et al. Nature Communications
- Multibit Data Storage States Formed in Plasma-Treated MoS2 Transistors
- (2014) Mikai Chen et al. ACS Nano
- Tunable Charge-Trap Memory Based on Few-Layer MoS2
- (2014) Enze Zhang et al. ACS Nano
- In Situ TEM Characterization of Shear-Stress-Induced Interlayer Sliding in the Cross Section View of Molybdenum Disulfide
- (2014) Juan Pablo Oviedo et al. ACS Nano
- A Universal Method for Preparation of Noble Metal Nanoparticle-Decorated Transition Metal Dichalcogenide Nanobelts
- (2014) Xun Hong et al. ADVANCED MATERIALS
- Scaling behavior of hysteresis in multilayer MoS2 field effect transistors
- (2014) Tao Li et al. APPLIED PHYSICS LETTERS
- Bandgap, Mid-Gap States, and Gating Effects in MoS2
- (2014) Chih-Pin Lu et al. NANO LETTERS
- Gate-bias stress-dependent photoconductive characteristics of multi-layer MoS2 field-effect transistors
- (2014) Kyungjune Cho et al. NANOTECHNOLOGY
- The valley Hall effect in MoS2 transistors
- (2014) K. F. Mak et al. SCIENCE
- Electrically Switchable Chiral Light-Emitting Transistor
- (2014) Y. J. Zhang et al. SCIENCE
- PulsedI–Vmeasurement method to obtain hysteresis-free characteristics of graphene FETs
- (2014) Jun-Mo Park et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics
- (2014) Rui Cheng et al. Nature Communications
- Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering
- (2014) Zhihao Yu et al. Nature Communications
- High-Performance, Highly Bendable MoS2 Transistors with High-K Dielectrics for Flexible Low-Power Systems
- (2013) Hsiao-Yu Chang et al. ACS Nano
- Electrically Driven Tuning of the Dielectric Constant in MoS2 Layers
- (2013) Elton J. G. Santos et al. ACS Nano
- Electric Stress-Induced Threshold Voltage Instability of Multilayer MoS2 Field Effect Transistors
- (2013) Kyungjune Cho et al. ACS Nano
- Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures
- (2013) Simone Bertolazzi et al. ACS Nano
- Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures
- (2013) Gwan-Hyoung Lee et al. ACS Nano
- Metal dichalcogenide nanosheets: preparation, properties and applications
- (2013) Xiao Huang et al. CHEMICAL SOCIETY REVIEWS
- Oxygen environmental and passivation effects on molybdenum disulfide field effect transistors
- (2013) Woanseo Park et al. NANOTECHNOLOGY
- Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials
- (2013) Woo Jong Yu et al. Nature Nanotechnology
- Graphene–MoS2 hybrid structures for multifunctional photoresponsive memory devices
- (2013) Kallol Roy et al. Nature Nanotechnology
- Electrical tuning of valley magnetic moment through symmetry control in bilayer MoS2
- (2013) Sanfeng Wu et al. Nature Physics
- Hysteresis in Single-Layer MoS2 Field Effect Transistors
- (2012) Dattatray J. Late et al. ACS Nano
- Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances
- (2012) APPLIED PHYSICS LETTERS
- Highly Flexible MoS2 Thin-Film Transistors with Ion Gel Dielectrics
- (2012) Jiang Pu et al. NANO LETTERS
- Valley polarization in MoS2 monolayers by optical pumping
- (2012) Hualing Zeng et al. Nature Nanotechnology
- Spin and valley quantum Hall ferromagnetism in graphene
- (2012) A. F. Young et al. Nature Physics
- Preparation of MoS2-Polyvinylpyrrolidone Nanocomposites for Flexible Nonvolatile Rewritable Memory Devices with Reduced Graphene Oxide Electrodes
- (2012) Juqing Liu et al. Small
- High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
- (2012) Sunkook Kim et al. Nature Communications
- Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors
- (2011) Subhamoy Ghatak et al. ACS Nano
- Single-Layer MoS2 Phototransistors
- (2011) Zongyou Yin et al. ACS Nano
- Single-layer MoS2 transistors
- (2011) B. Radisavljevic et al. Nature Nanotechnology
Find Funding. Review Successful Grants.
Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.
ExploreAsk a Question. Answer a Question.
Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.
Get Started