标题
HfSe
2
and ZrSe
2
: Two-dimensional semiconductors with native high-κ oxides
作者
关键词
-
出版物
Science Advances
Volume 3, Issue 8, Pages e1700481
出版商
American Association for the Advancement of Science (AAAS)
发表日期
2017-08-12
DOI
10.1126/sciadv.1700481
参考文献
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- Rapid Flame Synthesis of Atomically Thin MoO3 down to Monolayer Thickness for Effective Hole Doping of WSe2
- (2017) Lili Cai et al. NANO LETTERS
- Tunable electrical properties of multilayer HfSe2field effect transistors by oxygen plasma treatment
- (2017) Moonshik Kang et al. Nanoscale
- Remote Plasma Oxidation and Atomic Layer Etching of MoS2
- (2016) Hui Zhu et al. ACS Applied Materials & Interfaces
- Oxidation Effect in Octahedral Hafnium Disulfide Thin Film
- (2016) Sang Hoon Chae et al. ACS Nano
- High Current Density and Low Thermal Conductivity of Atomically Thin Semimetallic WTe2
- (2016) Michal J. Mleczko et al. ACS Nano
- Ultrafast and ultrasensitive phototransistors based on few-layered HfSe2
- (2016) Lei Yin et al. APPLIED PHYSICS LETTERS
- Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2
- (2016) Gioele Mirabelli et al. JOURNAL OF APPLIED PHYSICS
- Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition
- (2016) Chris D. English et al. NANO LETTERS
- Band Alignment in MoS2/WS2 Transition Metal Dichalcogenide Heterostructures Probed by Scanning Tunneling Microscopy and Spectroscopy
- (2016) Heather M. Hill et al. NANO LETTERS
- Toward High-Performance Top-Gate Ultrathin HfS2Field-Effect Transistors by Interface Engineering
- (2016) Kai Xu et al. Small
- Universal low-temperature Ohmic contacts for quantum transport in transition metal dichalcogenides
- (2016) Shuigang Xu et al. 2D Materials
- Raman Spectra of ZrS2 and ZrSe2 from Bulk to Atomically Thin Layers
- (2016) Samuel Mañas-Valero et al. Applied Sciences-Basel
- Electrical characterization of multilayer HfSe2 field-effect transistors on SiO2 substrate
- (2015) Moonshik Kang et al. APPLIED PHYSICS LETTERS
- Two-dimensional semiconductor HfSe2 and MoSe2/HfSe2 van der Waals heterostructures by molecular beam epitaxy
- (2015) K. E. Aretouli et al. APPLIED PHYSICS LETTERS
- Epitaxial ZrSe2/MoSe2 semiconductor v.d. Waals heterostructures on wide band gap AlN substrates
- (2015) P. Tsipas et al. MICROELECTRONIC ENGINEERING
- Statistical Study on the Schottky Barrier Reduction of Tunneling Contacts to CVD Synthesized MoS2
- (2015) Seunghyun Lee et al. NANO LETTERS
- Self-Limiting Layer-by-Layer Oxidation of Atomically Thin WSe2
- (2015) Mahito Yamamoto et al. NANO LETTERS
- A facile process to achieve hysteresis-free and fully stabilized graphene field-effect transistors
- (2015) Yun Ji Kim et al. Nanoscale
- Trap density probing on top-gate MoS2nanosheet field-effect transistors by photo-excited charge collection spectroscopy
- (2015) Kyunghee Choi et al. Nanoscale
- Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform
- (2015) Xu Cui et al. Nature Nanotechnology
- Highly anisotropic and robust excitons in monolayer black phosphorus
- (2015) Xiaomu Wang et al. Nature Nanotechnology
- Structure and control of charge density waves in two-dimensional 1T-TaS2
- (2015) Adam W. Tsen et al. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
- Integration of High-kOxide on MoS2by Using Ozone Pretreatment for High-Performance MoS2Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation
- (2015) Jingli Wang et al. Small
- HfO2on UV–O3exposed transition metal dichalcogenides: interfacial reactions study
- (2015) Angelica Azcatl et al. 2D Materials
- HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy
- (2014) Ruoyu Yue et al. ACS Nano
- Interface Engineering for High-Performance Top-Gated MoS2Field-Effect Transistors
- (2014) Xuming Zou et al. ADVANCED MATERIALS
- MoS2 functionalization for ultra-thin atomic layer deposited dielectrics
- (2014) Angelica Azcatl et al. APPLIED PHYSICS LETTERS
- Two-dimensional semiconductors with possible high room temperature mobility
- (2014) Wenxu Zhang et al. Nano Research
- Electronics based on two-dimensional materials
- (2014) Gianluca Fiori et al. Nature Nanotechnology
- Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors
- (2013) Cheng Gong et al. APPLIED PHYSICS LETTERS
- Where Does the Current Flow in Two-Dimensional Layered Systems?
- (2013) Saptarshi Das et al. NANO LETTERS
- The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
- (2013) Manish Chhowalla et al. Nature Chemistry
- $\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric
- (2012) Han Liu et al. IEEE ELECTRON DEVICE LETTERS
- High Performance Multilayer MoS2 Transistors with Scandium Contacts
- (2012) Saptarshi Das et al. NANO LETTERS
- Mechanical Exfoliation and Characterization of Single- and Few-Layer Nanosheets of WSe2, TaS2, and TaSe2
- (2012) Hai Li et al. Small
- Increase in current density for metal contacts to n-germanium by inserting TiO2 interfacial layer to reduce Schottky barrier height
- (2011) J.-Y. Jason Lin et al. APPLIED PHYSICS LETTERS
- Practical Strategies for Power-Efficient Computing Technologies
- (2010) L. Chang et al. PROCEEDINGS OF THE IEEE
- Thermally induced voltage shift in capacitance–voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al2O3/InAlN/GaN heterostructures
- (2009) M Ťapajna et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Investigation of trap effects in AlGaN∕GaN field-effect transistors by temperature dependent threshold voltage analysis
- (2008) P. Kordoš et al. APPLIED PHYSICS LETTERS
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