A Compact Current–Voltage Model for 2D Semiconductor Based Field-Effect Transistors Considering Interface Traps, Mobility Degradation, and Inefficient Doping Effect
A Compact Current–Voltage Model for 2D Semiconductor Based Field-Effect Transistors Considering Interface Traps, Mobility Degradation, and Inefficient Doping Effect
Find Funding. Review Successful Grants.
Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.
ExploreDiscover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversation