Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te)

Low-temperature photocarrier dynamics in monolayer MoS2

(2011) T. Korn et al.   APPLIED PHYSICS LETTERS

Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors

(2011) Leitao Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2

(2011) Emilio Scalise et al.   Nano Research

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

First principles study of structural, vibrational and electronic properties of graphene-like MX2 (M=Mo, Nb, W, Ta; X=S, Se, Te) monolayers

(2011) Yi Ding et al.   PHYSICA B-CONDENSED MATTER

Band-gap transition induced by interlayer van der Waals interaction in MoS2

(2011) S. W. Han et al.   PHYSICAL REVIEW B

Influence of quantum confinement on the electronic structure of the transition metal sulfideTS2

(2011) A. Kuc et al.   PHYSICAL REVIEW B

Phonons in single-layer and few-layer MoS2and WS2

(2011) A. Molina-Sánchez et al.   PHYSICAL REVIEW B

Anomalous Lattice Vibrations of Single- and Few-Layer MoS2

(2010) Changgu Lee et al.   ACS Nano

Emerging Photoluminescence in Monolayer MoS2

(2010) Andrea Splendiani et al.   NANO LETTERS

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

Frictional Characteristics of Atomically Thin Sheets

(2010) C. Lee et al.   SCIENCE