A Fermi‐Level‐Pinning‐Free 1D Electrical Contact at the Intrinsic 2D MoS 2 –Metal Junction

Charge-Transfer-Induced p-Type Channel in MoS2 Flake Field Effect Transistors

(2018) Sung-Wook Min et al.   ACS Applied Materials & Interfaces

Schottky Barrier Height Engineering for Electrical Contacts of Multilayered MoS2 Transistors with Reduction of Metal-Induced Gap States

(2018) Gwang-Sik Kim et al.   ACS Nano

Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions

(2018) Yuan Liu et al.   NATURE

Few-Layer MoS2 p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation

(2016) Ankur Nipane et al.   ACS Nano

p-Type MoS2and n-Type ZnO Diode and Its Performance Enhancement by the Piezophototronic Effect

(2016) Fei Xue et al.   ADVANCED MATERIALS

P-Type Polar Transition of Chemically Doped Multilayer MoS2 Transistor

(2016) Xiaochi Liu et al.   ADVANCED MATERIALS

Ultrastructural Characterization of the Lower Motor System in a Mouse Model of Krabbe Disease

(2016) Valentina Cappello et al.   Scientific Reports

Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform

(2015) Xu Cui et al.   Nature Nanotechnology

Controlling the Schottky barrier atMoS2/metal contacts by inserting a BN monolayer

(2015) Mojtaba Farmanbar et al.   PHYSICAL REVIEW B

Defect-Dominated Doping and Contact Resistance in MoS2

(2014) Stephen McDonnell et al.   ACS Nano

p-type doping of MoS2 thin films using Nb

(2014) Masihhur R. Laskar et al.   APPLIED PHYSICS LETTERS

The Unusual Mechanism of Partial Fermi Level Pinning at Metal–MoS2 Interfaces

(2014) Cheng Gong et al.   NANO LETTERS

MoS2 P-type Transistors and Diodes Enabled by High Work Function MoOx Contacts

(2014) Steven Chuang et al.   NANO LETTERS

Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures

(2013) Gwan-Hyoung Lee et al.   ACS Nano

High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects

(2013) Wenzhong Bao et al.   APPLIED PHYSICS LETTERS

Stable few-layer MoS2 rectifying diodes formed by plasma-assisted doping

(2013) Mikai Chen et al.   APPLIED PHYSICS LETTERS

Sulfur vacancies in monolayer MoS2 and its electrical contacts

(2013) D. Liu et al.   APPLIED PHYSICS LETTERS

One-Dimensional Electrical Contact to a Two-Dimensional Material

(2013) L. Wang et al.   SCIENCE

Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions

(2013) Marcio Fontana et al.   Scientific Reports

Ambipolar MoS2 Thin Flake Transistors

(2012) Yijin Zhang et al.   NANO LETTERS

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology