标题
Resistive switching phenomena: A review of statistical physics approaches
作者
关键词
-
出版物
Applied Physics Reviews
Volume 2, Issue 3, Pages 031303
出版商
AIP Publishing
发表日期
2015-09-01
DOI
10.1063/1.4929512
参考文献
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- Phenomenological modeling of memristive devices
- (2015) F. Merrikh Bayat et al. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Low voltage two-state-variable memristor model of vacancy-drift resistive switches
- (2015) Lu Zhang et al. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Physics gets its hands dirty
- (2015) NATURE MATERIALS
- Dual Conical Conducting Filament Model in Resistance Switching TiO2 Thin Films
- (2015) Kyung Min Kim et al. Scientific Reports
- Bipolar Resistance Switching in Transparent ITO/LaAlO3/SrTiO3 Memristors
- (2014) Shuxiang Wu et al. ACS Applied Materials & Interfaces
- A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View
- (2014) Jun Yeong Seok et al. ADVANCED FUNCTIONAL MATERIALS
- Isothermal Switching and Detailed Filament Evolution in Memristive Systems
- (2014) Patrick R. Mickel et al. ADVANCED MATERIALS
- Novel Electroforming-Free Nanoscaffold Memristor with Very High Uniformity, Tunability, and Density
- (2014) Shinbuhm Lee et al. ADVANCED MATERIALS
- Magnetoelectric Devices for Spintronics
- (2014) S. Fusil et al. Annual Review of Materials Research
- Dual random circuit breaker network model with equivalent thermal circuit network
- (2014) Kwanyong Kim et al. Applied Physics Express
- Improvement of resistive switching memory achieved by using arc-shaped bottom electrode
- (2014) Zhongqiang Wang et al. Applied Physics Express
- Coexistence of unipolar and bipolar resistive switching in Pt/NiO/Pt
- (2014) Dooho Choi et al. APPLIED PHYSICS LETTERS
- Bipolar and unipolar resistive switching modes in Pt/Zn0.99Zr0.01O/Pt structure for multi-bit resistance random access memory
- (2014) D. L. Xu et al. APPLIED PHYSICS LETTERS
- Scaling behaviors for resistive memory switching in NiO nanowire devices
- (2014) Sung In Kim et al. APPLIED PHYSICS LETTERS
- Bipolar resistive switching behavior of La0.5Sr0.5CoO3−σ films for nonvolatile memory applications
- (2014) Y. J. Fu et al. APPLIED PHYSICS LETTERS
- Interpretation of set and reset switching in nickel oxide thin films
- (2014) In Kyeong Yoo et al. APPLIED PHYSICS LETTERS
- Perovskite Oxides as Resistive Switching Memories: A Review
- (2014) Debashis Panda et al. FERROELECTRICS
- Area and Thickness Scaling of Forming Voltage of Resistive Switching Memories
- (2014) An Chen IEEE ELECTRON DEVICE LETTERS
- Heat Dissipation in Resistive Switching Devices: Comparison of Thermal Simulations and Experimental Results
- (2014) Eilam Yalon et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Crossbar RRAM Arrays: Selector Device Requirements During Read Operation
- (2014) Jiantao Zhou et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Improvement of switching uniformity in HfOx-based resistive random access memory with a titanium film and effects of titanium on resistive switching behaviors
- (2014) Sanghyun Ban et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Resistive Switching Effect in Titanium Oxides
- (2014) Zhensen Tang et al. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Origin of the OFF state variability in ReRAM cells
- (2014) Iulia Salaoru et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Recent progress in resistive random access memories: Materials, switching mechanisms, and performance
- (2014) F. Pan et al. MATERIALS SCIENCE & ENGINEERING R-REPORTS
- “Stretching” the energy landscape of oxides—Effects on electrocatalysis and diffusion
- (2014) Bilge Yildiz MRS BULLETIN
- Enhanced endurance reliability and low current operation for AlOx/HfOx based unipolar RRAM with Ni electrode
- (2014) Yu-Sheng Chen et al. SOLID-STATE ELECTRONICS
- Bulk mixed ion electron conduction in amorphous gallium oxide causes memristive behaviour
- (2014) Yoshitaka Aoki et al. Nature Communications
- Ferroelectric tunnel junctions for information storage and processing
- (2014) Vincent Garcia et al. Nature Communications
- A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope
- (2014) Mario Lanza Materials
- Using binary resistors to achieve multilevel resistive switching in multilayer NiO/Pt nanowire arrays
- (2014) Yen-Chun Huang et al. NPG Asia Materials
- Study of Multi-level Characteristics for 3D Vertical Resistive Switching Memory
- (2014) Yue Bai et al. Scientific Reports
- A Review on Conduction Mechanisms in Dielectric Films
- (2014) Fu-Chien Chiu Advances in Materials Science and Engineering
- Anomalous effect due to oxygen vacancy accumulation below the electrode in bipolar resistance switching Pt/Nb:SrTiO3 cells
- (2014) Shinbuhm Lee et al. APL Materials
- Cause and Prevention of Moisture-Induced Degradation of Resistance Random Access Memory Nanodevices
- (2013) Xiang Yang et al. ACS Nano
- Electrical Modulation of the Local Conduction at Oxide Tubular Interfaces
- (2013) Ying-Hui Hsieh et al. ACS Nano
- Microstructure, vertical strain control and tunable functionalities in self-assembled, vertically aligned nanocomposite thin films
- (2013) Aiping Chen et al. ACTA MATERIALIA
- Highly Improved Uniformity in the Resistive Switching Parameters of TiO2Thin Films by Inserting Ru Nanodots
- (2013) Jung Ho Yoon et al. ADVANCED MATERIALS
- Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament
- (2013) S. Balatti et al. ADVANCED MATERIALS
- Statistical properties of the electrically induced contact resistance between two stainless steel balls
- (2013) Sang-Kuk Kim et al. APPLIED PHYSICS LETTERS
- A physical model of switching dynamics in tantalum oxide memristive devices
- (2013) Patrick R. Mickel et al. APPLIED PHYSICS LETTERS
- Two opposite hysteresis curves in semiconductors with mobile dopants
- (2013) Jae Sung Lee et al. APPLIED PHYSICS LETTERS
- Resistance switching in oxides with inhomogeneous conductivity
- (2013) Da-Shan Shang et al. Chinese Physics B
- Metal and annealing atmospheres dependence of resistive switching in metal/Nb0.7wt%-SrTiO3 interfaces
- (2013) Shuai Zhong et al. CURRENT APPLIED PHYSICS
- Improvement of Resistive Switching Characteristics by Thermally Assisted Forming Process for $\hbox{SiO}_{2}$-Based Structure
- (2013) Yu-Ting Chen et al. IEEE ELECTRON DEVICE LETTERS
- Statistical Model and Rapid Prediction of RRAM SET Speed–Disturb Dilemma
- (2013) Wun-Cheng Luo et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Conduction Mechanism and Low Frequency Noise Analysis in Al/Pr0.7Ca0.3MnO3for Bipolar Resistive Switching
- (2013) Myoung-Sun Lee et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Bottom Electrode Modification of ZrO2Resistive Switching Memory Device with Au Nanodots
- (2013) Dai-Ying Lee et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Reset Current Reduction with Excellent Filament Controllability by Using Area Minimized and Field Enhanced Unipolar Resistive Random Access Memory Structure
- (2013) Kyung-Chang Ryoo et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Threshold Switching and Conductance Quantization in Al/HfO2/Si(p) Structures
- (2013) Xavier Saura et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Coexistence of the bipolar and unipolar resistive switching behaviors in vanadium doped ZnO films
- (2013) Dinglin Xu et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Resistive Switching Properties of Sol–Gel-Derived V-Doped SrTiO3 Thin Films
- (2013) Zhen Hua Tang et al. JOURNAL OF ELECTRONIC MATERIALS
- Nanocrystals for silicon-based light-emitting and memory devices
- (2013) S K Ray et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Cation-based resistance change memory
- (2013) Ilia Valov et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Vertically aligned nanocomposite electrolytes with superior out-of-plane ionic conductivity for solid oxide fuel cells
- (2013) Qing Su et al. JOURNAL OF POWER SOURCES
- Polarity dependence of forming step on improved performance in Ti/HfOx/W with dual resistive switching mode
- (2013) Pang-Shiu Chen et al. MICROELECTRONIC ENGINEERING
- RESISTIVE SWITCHING PHENOMENA IN COMPLEX OXIDE HETEROSTRUCTURES
- (2013) YU-LING JIN et al. MODERN PHYSICS LETTERS B
- Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories
- (2013) Jui-Yuan Chen et al. NANO LETTERS
- Electrical Performance and Scalability of Pt Dispersed SiO2 Nanometallic Resistance Switch
- (2013) Byung Joon Choi et al. NANO LETTERS
- Oxide Heterostructure Resistive Memory
- (2013) Yuchao Yang et al. NANO LETTERS
- Nanoscale resistive switching devices: mechanisms and modeling
- (2013) Yuchao Yang et al. Nanoscale
- Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions
- (2013) Zheng Wen et al. NATURE MATERIALS
- A plasma-treated chalcogenide switch device for stackable scalable 3D nanoscale memory
- (2013) Myoung-Jae Lee et al. Nature Communications
- In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure
- (2013) Gyeong-Su Park et al. Nature Communications
- Nanobatteries in redox-based resistive switches require extension of memristor theory
- (2013) I. Valov et al. Nature Communications
- High Current Density and Nonlinearity Combination of Selection Device Based on TaOx/TiO2/TaOx Structure for One Selector–One Resistor Arrays
- (2012) Wootae Lee et al. ACS Nano
- Continuous Electrical Tuning of the Chemical Composition of TaOx-Based Memristors
- (2012) Feng Miao et al. ACS Nano
- Multilevel Resistive Switching in Planar Graphene/SiO2 Nanogap Structures
- (2012) Congli He et al. ACS Nano
- Resistive Switching in Single Epitaxial ZnO Nanoislands
- (2012) Jing Qi et al. ACS Nano
- ZnO1–x Nanorod Arrays/ZnO Thin Film Bilayer Structure: From Homojunction Diode and High-Performance Memristor to Complementary 1D1R Application
- (2012) Chi-Hsin Huang et al. ACS Nano
- 32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory
- (2012) Gun Hwan Kim et al. ADVANCED FUNCTIONAL MATERIALS
- Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM
- (2012) Qi Liu et al. ADVANCED MATERIALS
- Thermophoresis/diffusion as a plausible mechanism for unipolar resistive switching in metal–oxide–metal memristors
- (2012) Dmitri B. Strukov et al. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Trap-assisted tunneling resistance switching effect in CeO2/La0.7(Sr0.1Ca0.9)0.3MnO3 heterostructure
- (2012) X. G. Chen et al. APPLIED PHYSICS LETTERS
- A unified model for unipolar resistive random access memory
- (2012) Kwangseok Lee et al. APPLIED PHYSICS LETTERS
- Mechanism for resistive switching in an oxide-based electrochemical metallization memory
- (2012) Shanshan Peng et al. APPLIED PHYSICS LETTERS
- Improvement of resistive switching in NiO-based nanowires by inserting Pt layers
- (2012) Yen-Chun Huang et al. APPLIED PHYSICS LETTERS
- Engineering nonlinearity into memristors for passive crossbar applications
- (2012) J. Joshua Yang et al. APPLIED PHYSICS LETTERS
- Reversible changes between bipolar and unipolar resistance-switching phenomena in a Pt/SrTiOx/Pt cell
- (2012) Shin Buhm Lee et al. CURRENT APPLIED PHYSICS
- Self-Selective Characteristics of Nanoscale $ \hbox{VO}_{x}$ Devices for High-Density ReRAM Applications
- (2012) Myungwoo Son et al. IEEE ELECTRON DEVICE LETTERS
- Evidence for Voltage-Driven Set/Reset Processes in Bipolar Switching RRAM
- (2012) Daniele Ielmini et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Self-Selection Unipolar $\hbox{HfO}_{x}$ -Based RRAM
- (2012) X. A. Tran et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- RRAM Crossbar Array With Cell Selection Device: A Device and Circuit Interaction Study
- (2012) Yexin Deng et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- A Control Strategy for Parallel Operation of Single-Phase Voltage Source Inverters: Analysis, Design and Experimental Results
- (2012) Telles B. Lazzarin et al. IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
- Investigation for Resistive Switching by Controlling Overflow Current in Resistance Change Nonvolatile Memory
- (2012) Seung-Eon Ahn et al. IEEE TRANSACTIONS ON NANOTECHNOLOGY
- Analysis and modeling of resistive switching statistics
- (2012) Shibing Long et al. JOURNAL OF APPLIED PHYSICS
- Coexistence of unipolar and bipolar resistive switching in BiFeO3 and Bi0.8Ca0.2FeO3 films
- (2012) Lu Liu et al. JOURNAL OF APPLIED PHYSICS
- Redox-Based Resistive Switching Memories
- (2012) Rainer Waser JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Bipolar resistive switching based on SrTiO3/YBa2Cu3O7epi-layers
- (2012) Kun Li et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Electrochemical metallization cells—blending nanoionics into nanoelectronics?
- (2012) Wei Lu et al. MRS BULLETIN
- Ferroelectric Tunnel Memristor
- (2012) D. J. Kim et al. NANO LETTERS
- A physics/circuit-based switching model for carbon-based resistive memory with sp2/sp3 cluster conversion
- (2012) Shengjun Qin et al. Nanoscale
- Forming mechanism of the bipolar resistance switching in double-layer memristive nanodevices
- (2012) S B Lee et al. NANOTECHNOLOGY
- High precision tuning of state for memristive devices by adaptable variation-tolerant algorithm
- (2012) Fabien Alibart et al. NANOTECHNOLOGY
- Memristive tri-stable resistive switching at ruptured conducting filaments of a Pt/TiO2/Pt cell
- (2012) Kyung Jean Yoon et al. NANOTECHNOLOGY
- A scalable neuristor built with Mott memristors
- (2012) Matthew D. Pickett et al. NATURE MATERIALS
- A ferroelectric memristor
- (2012) André Chanthbouala et al. NATURE MATERIALS
- Memristive devices for computing
- (2012) J. Joshua Yang et al. Nature Nanotechnology
- Highly uniform and reliable resistance switching properties in bilayer WOx/NbOx RRAM devices
- (2012) Sharif Md. Sadaf et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Metal–Oxide RRAM
- (2012) H.-S. Philip Wong et al. PROCEEDINGS OF THE IEEE
- Emerging memories: resistive switching mechanisms and current status
- (2012) Doo Seok Jeong et al. REPORTS ON PROGRESS IN PHYSICS
- Observation of conducting filament growth in nanoscale resistive memories
- (2012) Yuchao Yang et al. Nature Communications
- In situ imaging of the conducting filament in a silicon oxide resistive switch
- (2012) Jun Yao et al. Scientific Reports
- Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation
- (2012) Hai Yang Peng et al. Scientific Reports
- Coexistence of Bipolar and Unipolar Switching of Cu and Oxygen Vacancy Nanofilaments in Cu/TaOx/Pt Resistive Devices
- (2012) T. Liu et al. ECS Solid State Letters
- Resistive Switching Behavior and Multiple Transmittance States in Solution-Processed Tungsten Oxide
- (2011) Wei-Ting Wu et al. ACS Applied Materials & Interfaces
- Collective Motion of Conducting Filaments in Pt/n-Type TiO2/p-Type NiO/Pt Stacked Resistance Switching Memory
- (2011) Kyung Min Kim et al. ADVANCED FUNCTIONAL MATERIALS
- Effects of Moisture on the Switching Characteristics of Oxide-Based, Gapless-Type Atomic Switches
- (2011) Tohru Tsuruoka et al. ADVANCED FUNCTIONAL MATERIALS
- Oxygen Ion Drift-Induced Complementary Resistive Switching in Homo TiOx/TiOy/TiOxand Hetero TiOx/TiON/TiOxTriple Multilayer Frameworks
- (2011) Yoon Cheol Bae et al. ADVANCED FUNCTIONAL MATERIALS
- Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures
- (2011) Byungjin Cho et al. ADVANCED FUNCTIONAL MATERIALS
- Origin of the Ultra-nonlinear Switching Kinetics in Oxide-Based Resistive Switches
- (2011) Stephan Menzel et al. ADVANCED FUNCTIONAL MATERIALS
- Oxide Double-Layer Nanocrossbar for Ultrahigh-Density Bipolar Resistive Memory
- (2011) Seo Hyoung Chang et al. ADVANCED MATERIALS
- Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von-Neumann Computers
- (2011) Tsuyoshi Hasegawa et al. ADVANCED MATERIALS
- Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor
- (2011) Feng Miao et al. ADVANCED MATERIALS
- Memory effects in complex materials and nanoscale systems
- (2011) Yuriy V. Pershin et al. ADVANCES IN PHYSICS
- Molecular dynamics simulations of oxide memristors: thermal effects
- (2011) S. E. Savel’ev et al. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Multiscale simulation on electromigration of the oxygen vacancies in metal oxides
- (2011) Sang Ho Jeon et al. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- An ionic bottle for high-speed, long-retention memristive devices
- (2011) Dmitri B. Strukov et al. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Resistive switching of silicon-rich-oxide featuring high compatibility with CMOS technology for 3D stackable and embedded applications
- (2011) Ru Huang et al. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Conversion from unipolar to bipolar resistance switching by inserting Ta2O5 layer in Pt/TaOx/Pt cells
- (2011) H. K. Yoo et al. APPLIED PHYSICS LETTERS
- Molecular dynamics simulations of oxide memristors: Crystal field effects
- (2011) S. E. Savel’ev et al. APPLIED PHYSICS LETTERS
- Time-dependent current-voltage curves during the forming process in unipolar resistance switching
- (2011) S. B. Lee et al. APPLIED PHYSICS LETTERS
- Current-controlled negative differential resistance due to Joule heating in TiO2
- (2011) A. S. Alexandrov et al. APPLIED PHYSICS LETTERS
- Conduction mechanism of TiN/HfOx/Pt resistive switching memory: A trap-assisted-tunneling model
- (2011) Shimeng Yu et al. APPLIED PHYSICS LETTERS
- Self-consistent physical modeling of set/reset operations in unipolar resistive-switching memories
- (2011) Marc Bocquet et al. APPLIED PHYSICS LETTERS
- Interface-modified random circuit breaker network model applicable to both bipolar and unipolar resistance switching
- (2011) S. B. Lee et al. APPLIED PHYSICS LETTERS
- Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory
- (2011) Shimeng Yu et al. APPLIED PHYSICS LETTERS
- Challenges and opportunities for future non-volatile memory technology
- (2011) Yoshio Nishi CURRENT APPLIED PHYSICS
- Effect of Scaling $\hbox{WO}_{x}$-Based RRAMs on Their Resistive Switching Characteristics
- (2011) Seonghyun Kim et al. IEEE ELECTRON DEVICE LETTERS
- Stable Bipolar Resistive Switching Characteristics and Resistive Switching Mechanisms Observed in Aluminum Nitride-based ReRAM Devices
- (2011) Hee-Dong Kim et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Resistive switching characteristics and mechanism of thermally grown WOx thin films
- (2011) Kuyyadi P. Biju et al. JOURNAL OF APPLIED PHYSICS
- Adaptive oxide electronics: A review
- (2011) Sieu D. Ha et al. JOURNAL OF APPLIED PHYSICS
- Bipolar and unipolar resistive switching in Zn0.98Cu0.02O films
- (2011) Qingyu Xu et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Coexistence of the bipolar and unipolar resistive switching behaviours in Au/SrTiO3/Pt cells
- (2011) Xianwen Sun et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Memory materials: a unifying description
- (2011) Massimiliano Di Ventra et al. Materials Today
- Emerging memory technologies: Trends, challenges, and modeling methods
- (2011) A. Makarov et al. MICROELECTRONICS RELIABILITY
- Intrinsic Mechanisms of Memristive Switching
- (2011) Kazuki Nagashima et al. NANO LETTERS
- Memory and Threshold Resistance Switching in Ni/NiO Core–Shell Nanowires
- (2011) Li He et al. NANO LETTERS
- Scaling limits of resistive memories
- (2011) Victor V Zhirnov et al. NANOTECHNOLOGY
- Diode-less bilayer oxide (WOx–NbOx) device for cross-point resistive memory applications
- (2011) Xinjun Liu et al. NANOTECHNOLOGY
- The switching location of a bipolar memristor: chemical, thermal and structural mapping
- (2011) John Paul Strachan et al. NANOTECHNOLOGY
- Observation of two resistance switching modes in TiO2memristive devices electroformed at low current
- (2011) Feng Miao et al. NANOTECHNOLOGY
- Local resistance switching at grain and grain boundary surfaces of polycrystalline tungsten oxide films
- (2011) Da-Shan Shang et al. NANOTECHNOLOGY
- Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook
- (2011) Kyung Min Kim et al. NANOTECHNOLOGY
- A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure
- (2011) Kyung Min Kim et al. NANOTECHNOLOGY
- Electrochemical metallization memories—fundamentals, applications, prospects
- (2011) Ilia Valov et al. NANOTECHNOLOGY
- A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
- (2011) Myoung-Jae Lee et al. NATURE MATERIALS
- Solid-state memories based on ferroelectric tunnel junctions
- (2011) André Chanthbouala et al. Nature Nanotechnology
- Thermochemical resistive switching: materials, mechanisms, and scaling projections
- (2011) Daniele Ielmini et al. PHASE TRANSITIONS
- Surface and Defect Structure of Oxide Nanowires onSrTiO3
- (2011) Matthew S. J. Marshall et al. PHYSICAL REVIEW LETTERS
- Electrodynamics of correlated electron materials
- (2011) D. N. Basov et al. REVIEWS OF MODERN PHYSICS
- Lowering the Temperature of Solid Oxide Fuel Cells
- (2011) E. D. Wachsman et al. SCIENCE
- Atomic switches: atomic-movement-controlled nanodevices for new types of computing
- (2011) Takami Hino et al. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS
- Resistive-Switching Crossbar Memory Based on Ni-NiO Core-Shell Nanowires
- (2011) Carlo Cagli et al. Small
- Bipolar resistive switching of chromium oxide for resistive random access memory
- (2011) Shih-Cheng Chen et al. SOLID-STATE ELECTRONICS
- Pt/Ti/Al2O3/Al tunnel junctions exhibiting electroforming-free bipolar resistive switching behavior
- (2011) Doo Seok Jeong et al. SOLID-STATE ELECTRONICS
- Imaging oxygen defects and their motion at a manganite surface
- (2011) B. Bryant et al. Nature Communications
- Bipolar resistance switching characteristics with opposite polarity of Au/SrTiO3/Ti memory cells
- (2011) Xianwen Sun et al. Nanoscale Research Letters
- Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode
- (2010) Qi Liu et al. ACS Nano
- Self-Assembled Heteroepitaxial Oxide Nanocomposite Thin Film Structures: Designing Interface-Induced Functionality in Electronic Materials
- (2010) Judith L. MacManus-Driscoll ADVANCED FUNCTIONAL MATERIALS
- Direct Identification of the Conducting Channels in a Functioning Memristive Device
- (2010) John Paul Strachan et al. ADVANCED MATERIALS
- Coexistence of Filamentary and Homogeneous Resistive Switching in Fe-Doped SrTiO3 Thin-Film Memristive Devices
- (2010) Ruth Muenstermann et al. ADVANCED MATERIALS
- Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices
- (2010) Seunghyup Lee et al. APPLIED PHYSICS LETTERS
- Modeling of leakage currents in high-κ dielectrics: Three-dimensional approach via kinetic Monte Carlo
- (2010) Gunther Jegert et al. APPLIED PHYSICS LETTERS
- Investigation of the electroforming process in resistively switching TiO2 nanocrosspoint junctions
- (2010) C. Nauenheim et al. APPLIED PHYSICS LETTERS
- Improvement of reproducible resistance switching in polycrystalline tungsten oxide films by in situ oxygen annealing
- (2010) D. S. Shang et al. APPLIED PHYSICS LETTERS
- Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device
- (2010) C. Chen et al. APPLIED PHYSICS LETTERS
- Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications
- (2010) Joonmyoung Lee et al. APPLIED PHYSICS LETTERS
- Resistance switching in polycrystalline BiFeO3 thin films
- (2010) Kuibo Yin et al. APPLIED PHYSICS LETTERS
- Carrier Transport and Multilevel Switching Mechanism for Chromium Oxide Resistive Random-Access Memory
- (2010) Shih-Cheng Chen et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
- Highly Uniform Bipolar Resistive Switching With $ \hbox{Al}_{2}\hbox{O}_{3}$ Buffer Layer in Robust NbAlO-Based RRAM
- (2010) Lin Chen et al. IEEE ELECTRON DEVICE LETTERS
- Fractal Dimension of Conducting Paths in Nickel Oxide (NiO) Thin Films During Resistance Switching
- (2010) In Kyeong Yoo et al. IEEE TRANSACTIONS ON NANOTECHNOLOGY
- Effects of Ultraviolet Illumination on Resistive Switching Properties of CuxO Thin Film
- (2010) Chih-Yi Liu et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Spatial Redistribution of Oxygen Ions in Oxide Resistance Switching Device after Forming Process
- (2010) Takeshi Yajima et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Improved Resistive Switching Dispersion of NiOxThin Film by Cu-Doping Method
- (2010) Chih-Yi Liu et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Current Status of Nonvolatile Semiconductor Memory Technology
- (2010) Yoshihisa Fujisaki JAPANESE JOURNAL OF APPLIED PHYSICS
- Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers
- (2010) L. Goux et al. JOURNAL OF APPLIED PHYSICS
- Reversible alternation between bipolar and unipolar resistive switching in polycrystalline barium strontium titanate thin films
- (2010) Wan Shen et al. JOURNAL OF APPLIED PHYSICS
- Voltage-time dilemma of pure electronic mechanisms in resistive switching memory cells
- (2010) Herbert Schroeder et al. JOURNAL OF APPLIED PHYSICS
- Effects of compliance currents on the formation and rupture of conducting filaments in unipolar resistive switching of CoO film
- (2010) Z Q Wang et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- The resistive switching characteristics of a Ti/Gd2O3/Pt RRAM device
- (2010) Kou-Chen Liu et al. MICROELECTRONICS RELIABILITY
- Resistive Switches and Memories from Silicon Oxide
- (2010) Jun Yao et al. NANO LETTERS
- Active Terahertz Nanoantennas Based on VO2Phase Transition
- (2010) Minah Seo et al. NANO LETTERS
- Graphene Oxide Thin Films for Flexible Nonvolatile Memory Applications
- (2010) Hu Young Jeong et al. NANO LETTERS
- Resistive switching memory: observations with scanning probe microscopy
- (2010) Min Hwan Lee et al. Nanoscale
- A Pt/TiO2/Ti Schottky-type selection diode for alleviating the sneak current in resistance switching memory arrays
- (2010) Woo Young Park et al. NANOTECHNOLOGY
- Electrically configurable electroforming and bipolar resistive switching in Pt/TiO2/Pt structures
- (2010) Kyung Min Kim et al. NANOTECHNOLOGY
- Nonvolatile resistive switching in metal/La-doped BiFeO3/Pt sandwiches
- (2010) Mi Li et al. NANOTECHNOLOGY
- ‘Memristive’ switches enable ‘stateful’ logic operations via material implication
- (2010) Julien Borghetti et al. NATURE
- Complementary resistive switches for passive nanocrossbar memories
- (2010) Eike Linn et al. NATURE MATERIALS
- Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
- (2010) Deok-Hwang Kwon et al. Nature Nanotechnology
- Modeling for bipolar resistive memory switching in transition-metal oxides
- (2010) Ji Hyun Hur et al. PHYSICAL REVIEW B
- Scaling Theory for Unipolar Resistance Switching
- (2010) J. S. Lee et al. PHYSICAL REVIEW LETTERS
- Resistive Random Access Memory (ReRAM) Based on Metal Oxides
- (2010) Hiroyuki Akinaga et al. PROCEEDINGS OF THE IEEE
- Large resistive-switching phenomena observed in Ag/Si3N4/Al memory cells
- (2010) Hee-Dong Kim et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Unipolar resistive switching behavior of BiFeO3 thin films prepared by chemical solution deposition
- (2010) Shih-Wei Chen et al. THIN SOLID FILMS
- A Family of Electronically Reconfigurable Nanodevices
- (2009) J. Joshua Yang et al. ADVANCED MATERIALS
- Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
- (2009) Rainer Waser et al. ADVANCED MATERIALS
- Impact of Defect Distribution on Resistive Switching Characteristics of Sr2TiO4Thin Films
- (2009) Keisuke Shibuya et al. ADVANCED MATERIALS
- Large 1/f noise of unipolar resistance switching and its percolating nature
- (2009) S. B. Lee et al. APPLIED PHYSICS LETTERS
- Improvement of resistive switching characteristics in TiO2 thin films with embedded Pt nanocrystals
- (2009) APPLIED PHYSICS LETTERS
- Multilevel unipolar resistance switching in TiO2 thin films
- (2009) J. S. Lee et al. APPLIED PHYSICS LETTERS
- Electrode kinetics of Cu–SiO2-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories
- (2009) C. Schindler et al. APPLIED PHYSICS LETTERS
- Predictability of reset switching voltages in unipolar resistance switching
- (2009) S. B. Lee et al. APPLIED PHYSICS LETTERS
- The conical shape filament growth model in unipolar resistance switching of TiO2 thin film
- (2009) Kyung Min Kim et al. APPLIED PHYSICS LETTERS
- $\hbox{HfO}_{x}$ Bipolar Resistive Memory With Robust Endurance Using AlCu as Buffer Electrode
- (2009) Heng Yuan Lee et al. IEEE ELECTRON DEVICE LETTERS
- Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices
- (2009) Ugo Russo et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Separation of bulk and interface contributions to electroforming and resistive switching behavior of epitaxial Fe-doped SrTiO3
- (2009) T. Menke et al. JOURNAL OF APPLIED PHYSICS
- Forming-free colossal resistive switching effect in rare-earth-oxide Gd2O3 films for memristor applications
- (2009) Xun Cao et al. JOURNAL OF APPLIED PHYSICS
- Resistive switching characteristics of MnOx-based ReRAM
- (2009) Sen Zhang et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Filamentary Resistive Switching Localized at Cathode Interface in NiO Thin Films
- (2009) Kyung Min Kim et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Resistive non-volatile memory devices (Invited Paper)
- (2009) Rainer Waser MICROELECTRONIC ENGINEERING
- High-Density Crossbar Arrays Based on a Si Memristive System
- (2009) Sung Hyun Jo et al. NANO LETTERS
- Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory
- (2009) Myoung-Jae Lee et al. NANO LETTERS
- Memristor−CMOS Hybrid Integrated Circuits for Reconfigurable Logic
- (2009) Qiangfei Xia et al. NANO LETTERS
- The mechanism of electroforming of metal oxide memristive switches
- (2009) J Joshua Yang et al. NANOTECHNOLOGY
- Electric modulation of conduction in multiferroic Ca-doped BiFeO3 films
- (2009) C.-H. Yang et al. NATURE MATERIALS
- Elastic strain at interfaces and its influence on ionic conductivity in nanoscaled solid electrolyte thin films—theoretical considerations and experimental studies
- (2009) N. Schichtel et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- Mechanism for bipolar switching in aPt/TiO2/Ptresistive switching cell
- (2009) Doo Seok Jeong et al. PHYSICAL REVIEW B
- Occurrence of Both Unipolar Memory and Threshold Resistance Switching in a NiO Film
- (2009) S. H. Chang et al. PHYSICAL REVIEW LETTERS
- Memory Metamaterials
- (2009) T. Driscoll et al. SCIENCE
- Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory
- (2008) Myoung-Jae Lee et al. ADVANCED FUNCTIONAL MATERIALS
- Random Circuit Breaker Network Model for Unipolar Resistance Switching
- (2008) Seung Chul Chae et al. ADVANCED MATERIALS
- Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory
- (2008) S.-E. Ahn et al. ADVANCED MATERIALS
- Exponential ionic drift: fast switching and low volatility of thin-film memristors
- (2008) Dmitri B. Strukov et al. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Low current resistive switching in Cu–SiO2 cells
- (2008) C. Schindler et al. APPLIED PHYSICS LETTERS
- On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt
- (2008) Weihua Guan et al. APPLIED PHYSICS LETTERS
- Trap-controlled space-charge-limited current mechanism in resistance switching at Al∕Pr0.7Ca0.3MnO3 interface
- (2008) T. Harada et al. APPLIED PHYSICS LETTERS
- Effects of heat dissipation on unipolar resistance switching in Pt∕NiO∕Pt capacitors
- (2008) S. H. Chang et al. APPLIED PHYSICS LETTERS
- Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications
- (2008) Wen-Yuan Chang et al. APPLIED PHYSICS LETTERS
- Improved endurance behavior of resistive switching in (Ba,Sr)TiO3 thin films with W top electrode
- (2008) Wan Shen et al. APPLIED PHYSICS LETTERS
- Scaling behaviors of reset voltages and currents in unipolar resistance switching
- (2008) S. B. Lee et al. APPLIED PHYSICS LETTERS
- Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance
- (2008) K. Kinoshita et al. APPLIED PHYSICS LETTERS
- Direct observation of conducting filaments on resistive switching of NiO thin films
- (2008) J. Y. Son et al. APPLIED PHYSICS LETTERS
- Improvement of Resistive Switching Characteristics in $\hbox{SrZrO}_{3}$ Thin Films With Embedded Cr Layer
- (2008) Chih-Yang Lin et al. IEEE ELECTRON DEVICE LETTERS
- Improvement of Resistive Switching in $\hbox{Cu}_{x} \hbox{O}$ Using New RESET Mode
- (2008) M. Yin et al. IEEE ELECTRON DEVICE LETTERS
- Nonpolar Nonvolatile Resistive Switching in Cu Doped $\hbox{ZrO}_{2}$
- (2008) Weihua Guan et al. IEEE ELECTRON DEVICE LETTERS
- Understanding of the Switching Mechanism of a Pt/Ni-Doped SrTiO3Junction via Current–Voltage and Capacitance–Voltage Measurements
- (2008) Dong-jun Seong et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Resistance Switching and Formation of a Conductive Bridge in Metal/Binary Oxide/Metal Structure for Memory Devices
- (2008) Kohei Fujiwara et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Characteristic electroforming behavior in Pt/TiO2/Pt resistive switching cells depending on atmosphere
- (2008) Doo Seok Jeong et al. JOURNAL OF APPLIED PHYSICS
- Abnormal resistance switching behaviours of NiO thin films: possible occurrence of both formation and rupturing of conducting channels
- (2008) Chunli Liu et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Resistive switching in transition metal oxides
- (2008) Akihito Sawa Materials Today
- The missing memristor found
- (2008) Dmitri B. Strukov et al. NATURE
- Memristive switching mechanism for metal/oxide/metal nanodevices
- (2008) J. Joshua Yang et al. Nature Nanotechnology
- Phase-change memories
- (2008) Andrea L. Lacaita et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: Homogeneous/inhomogeneous transition of current distribution
- (2008) I. H. Inoue et al. PHYSICAL REVIEW B
- Colossal Ionic Conductivity at Interfaces of Epitaxial ZrO2:Y2O3/SrTiO3 Heterostructures
- (2008) J. Garcia-Barriocanal et al. SCIENCE
- MATERIALS SCIENCE: Who Wins the Nonvolatile Memory Race?
- (2008) G. I. Meijer SCIENCE
- Effect of thermal treatment on resistive switching characteristics in Pt/Ti/Al2O3/Pt devices
- (2008) Chih-Yang Lin et al. SURFACE & COATINGS TECHNOLOGY
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