Low voltage two-state-variable memristor model of vacancy-drift resistive switches

Metallic to hopping conduction transition in Ta2O5−x/TaOy resistive switching device

(2014) Ye Zhang et al.   APPLIED PHYSICS LETTERS

A compact modeling of TiO2-TiO2–x memristor

(2013) Lu Zhang et al.   APPLIED PHYSICS LETTERS

A physical model of switching dynamics in tantalum oxide memristive devices

(2013) Patrick R. Mickel et al.   APPLIED PHYSICS LETTERS

State Dynamics and Modeling of Tantalum Oxide Memristors

(2013) John Paul Strachan et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Continuous Electrical Tuning of the Chemical Composition of TaOx-Based Memristors

(2012) Feng Miao et al.   ACS Nano

Thermophoresis/diffusion as a plausible mechanism for unipolar resistive switching in metal–oxide–metal memristors

(2012) Dmitri B. Strukov et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Evidence for Voltage-Driven Set/Reset Processes in Bipolar Switching RRAM

(2012) Daniele Ielmini et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study

(2012) Federico Nardi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling

(2012) Stefano Larentis et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

Origin of the Ultra-nonlinear Switching Kinetics in Oxide-Based Resistive Switches

(2011) Stephan Menzel et al.   ADVANCED FUNCTIONAL MATERIALS

Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor

(2011) Feng Miao et al.   ADVANCED MATERIALS

Metal/TiO2 interfaces for memristive switches

(2011) J. Joshua Yang et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Conduction mechanism of TiN/HfOx/Pt resistive switching memory: A trap-assisted-tunneling model

(2011) Shimeng Yu et al.   APPLIED PHYSICS LETTERS

Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth

(2011) Daniele Ielmini   IEEE TRANSACTIONS ON ELECTRON DEVICES

Lognormal switching times for titanium dioxide bipolar memristors: origin and resolution

(2011) Gilberto Medeiros-Ribeiro et al.   NANOTECHNOLOGY

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Direct Identification of the Conducting Channels in a Functioning Memristive Device

(2010) John Paul Strachan et al.   ADVANCED MATERIALS

High switching endurance in TaOx memristive devices

(2010) J. Joshua Yang et al.   APPLIED PHYSICS LETTERS

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

A Family of Electronically Reconfigurable Nanodevices

(2009) J. Joshua Yang et al.   ADVANCED MATERIALS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Force modulation of tunnel gaps in metal oxide memristive nanoswitches

(2009) Feng Miao et al.   APPLIED PHYSICS LETTERS

Switching dynamics in titanium dioxide memristive devices

(2009) Matthew D. Pickett et al.   JOURNAL OF APPLIED PHYSICS

The mechanism of electroforming of metal oxide memristive switches

(2009) J Joshua Yang et al.   NANOTECHNOLOGY

Morphological and electrical changes in TiO2memristive devices induced by electroforming and switching

(2009) Ruth Münstermann et al.   Physica Status Solidi-Rapid Research Letters

Coupled Ionic and Electronic Transport Model of Thin-Film Semiconductor Memristive Behavior

(2009) Dmitri B. Strukov et al.   Small

Exponential ionic drift: fast switching and low volatility of thin-film memristors

(2008) Dmitri B. Strukov et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology