Trap-assisted tunneling resistance switching effect in CeO2/La0.7(Sr0.1Ca0.9)0.3MnO3 heterostructure

Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory

(2012) Xiaojian Zhu et al.   ADVANCED MATERIALS

Roles of silver oxide in the bipolar resistance switching devices with silver electrode

(2011) C. Y. Dong et al.   APPLIED PHYSICS LETTERS

Conduction mechanism of TiN/HfOx/Pt resistive switching memory: A trap-assisted-tunneling model

(2011) Shimeng Yu et al.   APPLIED PHYSICS LETTERS

Comprehensive study of the resistance switching in SrTiO3 and Nb-doped SrTiO3

(2011) X. G. Chen et al.   APPLIED PHYSICS LETTERS

Formation of transition layers at metal/perovskite oxide interfaces showing resistive switching behaviors

(2011) T. Yamamoto et al.   JOURNAL OF APPLIED PHYSICS

Reversible metal-insulator transition in LaAlO3thin films mediated by intragap defects: An alternative mechanism for resistive switching

(2011) Z. Q. Liu et al.   PHYSICAL REVIEW B

Coexistence of Filamentary and Homogeneous Resistive Switching in Fe-Doped SrTiO3 Thin-Film Memristive Devices

(2010) Ruth Muenstermann et al.   ADVANCED MATERIALS

Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices

(2010) Seunghyup Lee et al.   APPLIED PHYSICS LETTERS

Anticrosstalk characteristics correlated with the set process for α-Fe2O3/Nb–SrTiO3 stack-based resistive switching device

(2010) Y. S. Chen et al.   APPLIED PHYSICS LETTERS

Effects of the electroforming polarity on bipolar resistive switching characteristics of SrTiO3−δ films

(2010) X. B. Yan et al.   APPLIED PHYSICS LETTERS

Comprehensive modeling of resistive switching in the Al/TiOx/TiO2/Al heterostructure based on space-charge-limited conduction

(2010) Sungho Kim et al.   APPLIED PHYSICS LETTERS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Electric-field-induced resistance behavior in Ag/Pr1−x Ca x MnO3/Pt (x=0,0.3,1.0) heterostructures

(2009) Q. Wang et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Resistance and superconductivity switching caused by carrier injection: Evidences of self-trapping carriers in oxide electronics

(2009) Yuansha Chen et al.   JOURNAL OF APPLIED PHYSICS

Relationship between resistive switching characteristics and band diagrams ofTi/Pr1−xCaxMnO3junctions

(2009) S. Asanuma et al.   PHYSICAL REVIEW B

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today