Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament

标题
Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament
作者
关键词
-
出版物
ADVANCED MATERIALS
Volume 25, Issue 10, Pages 1474-1478
出版商
Wiley
发表日期
2013-01-03
DOI
10.1002/adma.201204097

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