标题
Resistive switching characteristics and mechanism of thermally grown WOx thin films
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 110, Issue 6, Pages 064505
出版商
AIP Publishing
发表日期
2011-09-21
DOI
10.1063/1.3633227
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Coexistence of Filamentary and Homogeneous Resistive Switching in Fe-Doped SrTiO3 Thin-Film Memristive Devices
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- Memristive switching mechanism for metal/oxide/metal nanodevices
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- Thermal oxidation of chemical vapour deposited tungsten layers on silicon substrates for embedded non-volatile memory application
- (2008) Rakesh Sohal et al. THIN SOLID FILMS
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