Reset Current Reduction with Excellent Filament Controllability by Using Area Minimized and Field Enhanced Unipolar Resistive Random Access Memory Structure

标题
Reset Current Reduction with Excellent Filament Controllability by Using Area Minimized and Field Enhanced Unipolar Resistive Random Access Memory Structure
作者
关键词
-
出版物
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 51, Issue 4S, Pages 04DD07
出版商
Japan Society of Applied Physics
发表日期
2013-12-21
DOI
10.7567/jjap.51.04dd07

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