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Dual Defects of Cation and Anion in Memristive Nonvolatile Memory of Metal Oxides

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A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Direct Identification of the Conducting Channels in a Functioning Memristive Device

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Coexistence of unipolar and bipolar resistive switching characteristics in ZnO thin films

(2010) Seunghyup Lee et al.   JOURNAL OF APPLIED PHYSICS

Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers

(2010) L. Goux et al.   JOURNAL OF APPLIED PHYSICS

Resistive-Switching Memory Effects of NiO Nanowire/Metal Junctions

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Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

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Predictability of reset switching voltages in unipolar resistance switching

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Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory

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Random Circuit Breaker Network Model for Unipolar Resistance Switching

(2008) Seung Chul Chae et al.   ADVANCED MATERIALS

Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory

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Direct observation of conducting filaments on resistive switching of NiO thin films

(2008) J. Y. Son et al.   APPLIED PHYSICS LETTERS

The missing memristor found

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Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology