Integrating AlInN interlayers into InGaN/GaN multiple quantum wells for enhanced green emission

Toward ultimate efficiency: progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes

(2018) Yuji Zhao et al.   Advances in Optics and Photonics

Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers

(2017) Syed Ahmed Al Muyeed et al.   AIP Advances

InGaN/Dilute-As GaNAs Interface Quantum Well for Red Emitters

(2016) Chee-Keong Tan et al.   Scientific Reports

Large Optical Gain AlInN-Delta-GaN Quantum Well for Deep Ultraviolet Emitters

(2016) Chee-Keong Tan et al.   Scientific Reports

Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

(2015) K. Lekhal et al.   APPLIED PHYSICS LETTERS

On the increased efficiency in InGaN-based multiple quantum wells emitting at 530–590 nm with AlGaN interlayers

(2015) D.D. Koleske et al.   JOURNAL OF CRYSTAL GROWTH

Advantages of III-nitride laser diodes in solid-state lighting

(2015) Jonathan J. Wierer et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Contribution of deep-level defects to decreasing radiative efficiency of InGaN/GaN quantum wells with increasing emission wavelength

(2014) Andrew M. Armstrong et al.   Applied Physics Express

Development of InGaN-based red LED grown on (0001) polar surface

(2014) Jong-Il Hwang et al.   Applied Physics Express

Strain-balanced InGaN/GaN multiple quantum wells

(2014) D. M. Van Den Broeck et al.   APPLIED PHYSICS LETTERS

Toward Smart and Ultra-efficient Solid-State Lighting

(2014) Jeffrey Y. Tsao et al.   Advanced Optical Materials

InGaN Light-Emitting Diodes onc-Face Sapphire Substrates in Green Gap Spectral Range

(2013) Shinji Saito et al.   Applied Physics Express

Comparison between blue lasers and light-emitting diodes for future solid-state lighting

(2013) Jonathan J. Wierer et al.   Laser & Photonics Reviews

Efficiency-Droop Suppression by Using Large-Bandgap AlGaInN Thin Barrier Layers in InGaN Quantum-Well Light-Emitting Diodes

(2013) Guangyu Liu et al.   IEEE Photonics Journal

Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices

(2012) R M Farrell et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

III-Nitride Photonics

(2012) Nelson Tansu et al.   IEEE Photonics Journal

High-temperature characteristics of Seebeck coefficients for AlInN alloys grown by metalorganic vapor phase epitaxy

(2011) Jing Zhang et al.   JOURNAL OF APPLIED PHYSICS

Characterizations of Seebeck coefficients and thermoelectric figures of merit for AlInN alloys with various In-contents

(2011) Jing Zhang et al.   JOURNAL OF APPLIED PHYSICS

Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes

(2011) Jing Zhang et al.   JOURNAL OF APPLIED PHYSICS

Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates

(2011) Guangyu Liu et al.   JOURNAL OF CRYSTAL GROWTH

Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells

(2011) Hongping Zhao et al.   OPTICS EXPRESS

Indium induced step transformation during InGaN growth on GaN

(2010) D. D. Koleske et al.   APPLIED PHYSICS LETTERS

Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes

(2010) Hee Jin Kim et al.   APPLIED PHYSICS LETTERS

Analysis of InGaN-delta-InN quantum wells for light-emitting diodes

(2010) Hongping Zhao et al.   APPLIED PHYSICS LETTERS

Thermoelectric properties of lattice-matched AlInN alloy grown by metal organic chemical vapor deposition

(2010) Hua Tong et al.   APPLIED PHYSICS LETTERS

Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile

(2009) Hongping Zhao et al.   APPLIED PHYSICS LETTERS

Metalorganic Vapor Phase Epitaxy of III-Nitride Light-Emitting Diodes on Nanopatterned AGOG Sapphire Substrate by Abbreviated Growth Mode

(2009) Yik-Khoon Ee et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

LEDs for Solid-State Lighting: Performance Challenges and Recent Advances

(2009) M.H. Crawford   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes

(2008) Hongping Zhao et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS