Toward Smart and Ultra-efficient Solid-State Lighting

Monolithic Integration of InGaN-Based Nanocolumn Light-Emitting Diodes with Different Emission Colors

(2013) Katsumi Kishino et al.   Applied Physics Express

Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate

(2013) Z. Li et al.   APPLIED PHYSICS LETTERS

Molecular beam epitaxial growth and optical properties of red-emitting (λ = 650 nm) InGaN/GaN disks-in-nanowires on silicon

(2013) S. Jahangir et al.   APPLIED PHYSICS LETTERS

Whiter brights with lasers

(2013) Lawrence Ulrich   IEEE SPECTRUM

Quantum-Dot-Based Solid-State Lighting With Electric-Field-Tunable Chromaticity

(2013) Jeffrey Y. Tsao et al.   Journal of Display Technology

First-Principle Electronic Properties of Dilute-As GaNAs Alloy for Visible Light Emitters

(2013) Chee-Keong Tan et al.   Journal of Display Technology

Analysis of Internal Quantum Efficiency and Current Injection Efficiency in III-Nitride Light-Emitting Diodes

(2013) Hongping Zhao et al.   Journal of Display Technology

Semipolar $({\hbox{20}}\bar\hbox{2\bar\hbox{1)$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting

(2013) Daniel F. Feezell et al.   Journal of Display Technology

Comparison between blue lasers and light-emitting diodes for future solid-state lighting

(2013) Jonathan J. Wierer et al.   Laser & Photonics Reviews

Efficiency droop in light-emitting diodes: Challenges and countermeasures

(2013) Jaehee Cho et al.   Laser & Photonics Reviews

Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop

(2013) Justin Iveland et al.   PHYSICAL REVIEW LETTERS

High-Power, Low-Efficiency-Droop Semipolar ($20\bar{2}\bar{1}$) Single-Quantum-Well Blue Light-Emitting Diodes

(2012) Chih-Chien Pan et al.   Applied Physics Express

Analysis of efficiency droop in nitride light-emitting diodes by the reduced effective volume of InGaN active material

(2012) Han-Youl Ryu et al.   APPLIED PHYSICS LETTERS

Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes

(2012) Emmanouil Kioupakis et al.   APPLIED PHYSICS LETTERS

Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells

(2012) Yuji Zhao et al.   APPLIED PHYSICS LETTERS

Rebound effects for lighting

(2012) Harry D. Saunders et al.   ENERGY POLICY

Maximum White Luminous Efficacy of Radiation Versus Color Rendering Index and Color Temperature: Exact Results and a Useful Analytic Expression

(2012) Po-Chieh Hung et al.   Journal of Display Technology

Direct Measurement of Coherency Limits for Strain Relaxation in Heteroepitaxial Core/Shell Nanowires

(2012) Shadi A. Dayeh et al.   NANO LETTERS

Color rendition engine

(2012) Artūras Žukauskas et al.   OPTICS EXPRESS

Photonic crystal light-emitting sources

(2012) Aurélien David et al.   REPORTS ON PROGRESS IN PHYSICS

Blue light emitting diode internal and injection efficiency

(2012) Ilya E. Titkov et al.   AIP Advances

Quantum Dots for LED Downconversion in Display Applications

(2012) Seth Coe-Sullivan et al.   ECS Journal of Solid State Science and Technology

Visible-Color-Tunable Light-Emitting Diodes

(2011) Young Joon Hong et al.   ADVANCED MATERIALS

High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm$^{2}$

(2011) Yuji Zhao et al.   Applied Physics Express

Dependence on composition of the optical polarization properties of m-plane InxGa1−xN commensurately grown on ZnO

(2011) Hiroaki Tamaki et al.   APPLIED PHYSICS LETTERS

High-Efficiency InGaN/GaN Dot-in-a-Wire Red Light-Emitting Diodes

(2011) Hieu Pham Trung Nguyen et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes

(2011) Jing Zhang et al.   JOURNAL OF APPLIED PHYSICS

Gallium Nitride Based Logpile Photonic Crystals

(2011) Ganapathi Subramania et al.   NANO LETTERS

p-Type Modulation Doped InGaN/GaN Dot-in-a-Wire White-Light-Emitting Diodes Monolithically Grown on Si(111)

(2011) H. P. T. Nguyen et al.   NANO LETTERS

Four-color laser white illuminant demonstrating high color-rendering quality

(2011) A. Neumann et al.   OPTICS EXPRESS

Structured-light 3D surface imaging: a tutorial

(2011) Jason Geng   Advances in Optics and Photonics

White-Light-Emitting Diodes with Quantum Dot Color Converters for Display Backlights

(2010) Eunjoo Jang et al.   ADVANCED MATERIALS

Spectral modulation attenuates molecular, endocrine, and neurobehavioral disruption induced by nocturnal light exposure

(2010) Shadab A. Rahman et al.   AMERICAN JOURNAL OF PHYSIOLOGY-ENDOCRINOLOGY AND METABOLISM

30-mW-Class High-Power and High-Efficiency Blue Semipolar (10\bar1\bar1) InGaN/GaN Light-Emitting Diodes Obtained by Backside Roughening Technique

(2010) Yuji Zhao et al.   Applied Physics Express

Characteristics of Thickm-Plane InGaN Films Grown on ZnO Substrates Using Room Temperature Epitaxial Buffer Layers

(2010) Kazuma Shimomoto et al.   Applied Physics Express

High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (20\bar21) GaN Substrates

(2010) Shuichiro Yamamoto et al.   Applied Physics Express

Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping

(2010) Ahmed N. Noemaun et al.   APPLIED PHYSICS LETTERS

II–VI semiconductor color converters for efficient green, yellow, and red light emitting diodes

(2010) M. A. Haase et al.   APPLIED PHYSICS LETTERS

Highly-directional emission patterns based on near single guided mode extraction from GaN-based ultrathin microcavity light-emitting diodes with photonic crystals

(2010) Chun-Feng Lai et al.   APPLIED PHYSICS LETTERS

Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate

(2010) Hiroto Sekiguchi et al.   APPLIED PHYSICS LETTERS

Strain influenced indium composition distribution in GaN/InGaN core-shell nanowires

(2010) Qiming Li et al.   APPLIED PHYSICS LETTERS

Vertically-stacked LEDs with invariance of color Chromaticity

(2010) K.N. Hui et al.   CURRENT APPLIED PHYSICS

Sustainable energy-efficient wireless applications using light

(2010) Mohsen Kavehrad   IEEE COMMUNICATIONS MAGAZINE

A Survey on Handoffs — Lessons for 60 GHz Based Wireless Systems

(2010) Bien Van Quang et al.   IEEE Communications Surveys and Tutorials

Effects of strain on defect structure in II-VI green color converters

(2010) S. McKernan et al.   JOURNAL OF APPLIED PHYSICS

Thermal stability of thin InGaN films on GaN

(2010) G.T. Thaler et al.   JOURNAL OF CRYSTAL GROWTH

Solid-state lighting: an energy-economics perspective

(2010) J Y Tsao et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

White light emitting diodes with super-high luminous efficacy

(2010) Yukio Narukawa et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Solid-state lighting: ‘The case’ 10 years after and future prospects

(2010) Roland Haitz et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Solid-State Lighting: An Integrated Human Factors, Technology, and Economic Perspective

(2010) Jeffrey Y Tsao et al.   PROCEEDINGS OF THE IEEE

Exciton-polariton Bose-Einstein condensation

(2010) Hui Deng et al.   REVIEWS OF MODERN PHYSICS

Strong Emission from GaInN/GaN Multiple Quantum Wells on High-Crystalline-Quality Thickm-Plane GaInN Underlying Layer on Grooved GaN

(2009) Ryota Senda et al.   Applied Physics Express

Dislocation density reduction in GaN by dislocation filtering through a self-assembled monolayer of silica microspheres

(2009) Qiming Li et al.   APPLIED PHYSICS LETTERS

Auger recombination rates in nitrides from first principles

(2009) Kris T. Delaney et al.   APPLIED PHYSICS LETTERS

Metalorganic Vapor Phase Epitaxy of III-Nitride Light-Emitting Diodes on Nanopatterned AGOG Sapphire Substrate by Abbreviated Growth Mode

(2009) Yik-Khoon Ee et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

LEDs for Solid-State Lighting: Performance Challenges and Recent Advances

(2009) M.H. Crawford   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

III-nitride photonic-crystal light-emitting diodes with high extraction efficiency

(2009) Jonathan J. Wierer et al.   Nature Photonics

Sensors for 3D Imaging: Metric Evaluation and Calibration of a CCD/CMOS Time-of-Flight Camera

(2009) Filiberto Chiabrando et al.   SENSORS

Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes

(2008) Aurélien David et al.   APPLIED PHYSICS LETTERS

Color rendering: A tale of two metrics

(2008) Mark S. Rea et al.   COLOR RESEARCH AND APPLICATION

Quantum dot laser diode with low threshold and low internal loss

(2008) D.G. Deppe et al.   ELECTRONICS LETTERS

Control of stress and crystalline quality in GaInN films used for green emitters

(2008) Motoaki Iwaya et al.   JOURNAL OF CRYSTAL GROWTH

Effect of an Al2O3 transition layer on InGaN on ZnO substrates by organometallic vapor-phase epitaxy

(2008) Nola Li et al.   JOURNAL OF CRYSTAL GROWTH

Performance of high-power III-nitride light emitting diodes

(2008) G. Chen et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE