High-temperature characteristics of Seebeck coefficients for AlInN alloys grown by metalorganic vapor phase epitaxy

Erbium-Doped AlInGaN Alloys as High-Temperature Thermoelectric Materials

(2011) Bed Nidhi Pantha et al.   Applied Physics Express

Strong light extraction enhancement in GaInN light-emitting diodes by using self-organized nanoscale patterning of p-type GaN

(2011) Sameer Chhajed et al.   APPLIED PHYSICS LETTERS

Characterizations of Seebeck coefficients and thermoelectric figures of merit for AlInN alloys with various In-contents

(2011) Jing Zhang et al.   JOURNAL OF APPLIED PHYSICS

Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells

(2011) Hongping Zhao et al.   OPTICS EXPRESS

Dielectric function of Al-rich AlInN in the range 1-18 eV

(2011) E. Sakalauskas et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Light Extraction Efficiency and Radiation Patterns of III-Nitride Light-Emitting Diodes With Colloidal Microlens Arrays With Various Aspect Ratios

(2011) Xiao-Hang Li et al.   IEEE Photonics Journal

Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography

(2011) Guangyu Liu et al.   Nanoscale Research Letters

Thermoelectric properties of lattice-matched AlInN alloy grown by metal organic chemical vapor deposition

(2010) Hua Tong et al.   APPLIED PHYSICS LETTERS

Design Strategies for InGaN-Based Green Lasers

(2010) Anusha Venkatachalam et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Rigorous calculation of the Seebeck coefficient and mobility of thermoelectric materials

(2010) Ashok T. Ramu et al.   JOURNAL OF APPLIED PHYSICS

Blue–violet boron-based Distributed Bragg Reflectors for VCSEL application

(2010) M. Abid et al.   JOURNAL OF CRYSTAL GROWTH

Thermopower Study of GaN-Based Materials for Next-Generation Thermoelectric Devices and Applications

(2010) Elisa N. Hurwitz et al.   JOURNAL OF ELECTRONIC MATERIALS

GaN-Based Integrated Lateral Thermoelectric Device for Micro-Power Generation

(2009) Alexander Sztein et al.   Applied Physics Express

500-nm Optical Gain Anisotropy of Semipolar (11\bar22) InGaN Quantum Wells

(2009) Dmitry S. Sizov et al.   Applied Physics Express

510–515 nm InGaN-Based Green Laser Diodes onc-Plane GaN Substrate

(2009) Takashi Miyoshi et al.   Applied Physics Express

InGaN/GaN multiple quantum well solar cells with long operating wavelengths

(2009) R. Dahal et al.   APPLIED PHYSICS LETTERS

500 nm electrically driven InGaN based laser diodes

(2009) Désirée Queren et al.   APPLIED PHYSICS LETTERS

Selective Area Metal–Organic Vapor Phase Epitaxy of Nitride Semiconductors for Multicolor Emission

(2009) T. Shioda et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells

(2009) Jae-Hyun Ryou et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

GaN Substrates—Progress, Status, and Prospects

(2009) T. Paskova et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Novel Epitaxial Nanostructures for the Improvement of InGaN LEDs Efficiency

(2009) Taeil Jung et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

LEDs for Solid-State Lighting: Performance Challenges and Recent Advances

(2009) M.H. Crawford   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Thermoelectric Properties of In0.3Ga0.7N Alloys

(2009) B. N. Pantha et al.   JOURNAL OF ELECTRONIC MATERIALS

III-nitride photonic-crystal light-emitting diodes with high extraction efficiency

(2009) Jonathan J. Wierer et al.   Nature Photonics

High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap

(2008) Carl J. Neufeld et al.   APPLIED PHYSICS LETTERS

Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes

(2008) K. McGroddy et al.   APPLIED PHYSICS LETTERS

Thermoelectric properties of InxGa1−xN alloys

(2008) B. N. Pantha et al.   APPLIED PHYSICS LETTERS

Influence of growth temperature and V/III ratio on the optical characteristics of narrow band gap (0.77eV) InN grown on GaN/sapphire using pulsed MOVPE

(2008) Muhammad Jamil et al.   JOURNAL OF CRYSTAL GROWTH