- Home
- Publications
- Publication Search
- Publication Details
Title
III-Nitride Photonics
Authors
Keywords
-
Journal
IEEE Photonics Journal
Volume 2, Issue 2, Pages 241-248
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2012-10-04
DOI
10.1109/jphot.2010.2045887
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- 510–515 nm InGaN-Based Green Laser Diodes onc-Plane GaN Substrate
- (2009) Takashi Miyoshi et al. Applied Physics Express
- Analysis of optical gain property in the InGaN/GaN triangular shaped quantum well under the piezoelectric field
- (2009) Ziwen Yang et al. APPLIED PHYSICS LETTERS
- Optically pumped intersubband emission of short-wave infrared radiation with GaN/AlN quantum wells
- (2009) Kristina Driscoll et al. APPLIED PHYSICS LETTERS
- m-plane pure blue laser diodes with p-GaN/n-AlGaN-based asymmetric cladding and InGaN-based wave-guiding layers
- (2009) You-Da Lin et al. APPLIED PHYSICS LETTERS
- Dip-shaped InGaN/GaN quantum-well light-emitting diodes with high efficiency
- (2009) Seoung-Hwan Park et al. APPLIED PHYSICS LETTERS
- Strain effects on the intersubband transitions in GaN/AlN multiple quantum wells grown by low-temperature metal organic vapor phase epitaxy with AlGaN interlayer
- (2009) Hassanet Sodabanlu et al. APPLIED PHYSICS LETTERS
- InGaN/GaN multiple quantum well solar cells with long operating wavelengths
- (2009) R. Dahal et al. APPLIED PHYSICS LETTERS
- Characterization of blue-green m-plane InGaN light emitting diodes
- (2009) You-Da Lin et al. APPLIED PHYSICS LETTERS
- Electroluminescent measurement of the internal quantum efficiency of light emitting diodes
- (2009) Amorette Getty et al. APPLIED PHYSICS LETTERS
- Demonstration of nonpolar a-plane InGaN/GaN light emitting diode on r-plane sapphire substrate
- (2009) Sung-Min Hwang et al. APPLIED PHYSICS LETTERS
- High-efficiency staggered 530 nm InGaN/InGaN/GaN quantum-well light-emitting diodes
- (2009) Seoung-Hwan Park et al. APPLIED PHYSICS LETTERS
- Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes
- (2009) Jiuru Xu et al. APPLIED PHYSICS LETTERS
- Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile
- (2009) Hongping Zhao et al. APPLIED PHYSICS LETTERS
- 500 nm electrically driven InGaN based laser diodes
- (2009) Désirée Queren et al. APPLIED PHYSICS LETTERS
- Auger recombination rates in nitrides from first principles
- (2009) Kris T. Delaney et al. APPLIED PHYSICS LETTERS
- Reduced nonthermal rollover of wide-well GaInN light-emitting diodes
- (2009) Markus Maier et al. APPLIED PHYSICS LETTERS
- InGaN laser diodes with 50 mW output power emitting at 515 nm
- (2009) Adrian Avramescu et al. APPLIED PHYSICS LETTERS
- Introduction to the Issue on Solid-State Lighting
- (2009) Nelson Tansu et al. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
- Theory of GaN Quantum Dots for Optical Applications
- (2009) D.P. Williams et al. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
- Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500–540 nm
- (2009) Hongping Zhao et al. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
- GaN Substrates—Progress, Status, and Prospects
- (2009) T. Paskova et al. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
- Phosphor-Free Monolithic White-Light LED
- (2009) Chih-Feng Lu et al. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
- Optimization of Light Extraction Efficiency of III-Nitride LEDs With Self-Assembled Colloidal-Based Microlenses
- (2009) Yik-Khoon Ee et al. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
- Metalorganic Vapor Phase Epitaxy of III-Nitride Light-Emitting Diodes on Nanopatterned AGOG Sapphire Substrate by Abbreviated Growth Mode
- (2009) Yik-Khoon Ee et al. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
- Novel Epitaxial Nanostructures for the Improvement of InGaN LEDs Efficiency
- (2009) Taeil Jung et al. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
- LEDs for Solid-State Lighting: Performance Challenges and Recent Advances
- (2009) M.H. Crawford IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
- High-Efficiency InGaN/GaN Light Emitters Based on Nanophotonics and Plasmonics
- (2009) K. Okamoto et al. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
- Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime
- (2009) H.P. Zhao et al. IET Optoelectronics
- Theory of high field carrier transport and impact ionization in wurtzite GaN. Part I: A full band Monte Carlo model
- (2009) Francesco Bertazzi et al. JOURNAL OF APPLIED PHYSICS
- Electronic and optical properties of InGaN quantum dot based light emitters for solid state lighting
- (2009) Yuh-Renn Wu et al. JOURNAL OF APPLIED PHYSICS
- Growth and characterization of green GaInN-based light emitting diodes on free-standing non-polar GaN templates
- (2009) T. Detchprohm et al. JOURNAL OF CRYSTAL GROWTH
- Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire
- (2009) Yik-Khoon Ee et al. JOURNAL OF CRYSTAL GROWTH
- III-nitride photonic-crystal light-emitting diodes with high extraction efficiency
- (2009) Jonathan J. Wierer et al. Nature Photonics
- Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures
- (2009) Yik-Khoon Ee et al. OPTICS EXPRESS
- Electronic and optical properties of staggered InGaN/InGaN quantum-well light-emitting diodes
- (2009) Seoung-Hwan Park et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Recent advances in wide bandgap semiconductor biological and gas sensors
- (2009) S.J. Pearton et al. PROGRESS IN MATERIALS SCIENCE
- THz generation from InN films due to destructive interference between optical rectification and photocurrent surge
- (2009) Guibao Xu et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Type-II InGaN-GaNAs quantum wells for lasers applications
- (2008) Ronald A. Arif et al. APPLIED PHYSICS LETTERS
- High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap
- (2008) Carl J. Neufeld et al. APPLIED PHYSICS LETTERS
- Emission color tunable light-emitting diodes composed of InGaN multifacet quantum wells
- (2008) M. Funato et al. APPLIED PHYSICS LETTERS
- Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells
- (2008) Xianfeng Ni et al. APPLIED PHYSICS LETTERS
- On the importance of radiative and Auger losses in GaN-based quantum wells
- (2008) J. Hader et al. APPLIED PHYSICS LETTERS
- Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes
- (2008) K. McGroddy et al. APPLIED PHYSICS LETTERS
- Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop
- (2008) Martin F. Schubert et al. APPLIED PHYSICS LETTERS
- Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes
- (2008) Ronald A Arif et al. IEEE JOURNAL OF QUANTUM ELECTRONICS
- Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes
- (2008) Hongping Zhao et al. IEEE JOURNAL OF QUANTUM ELECTRONICS
- Self-consistent gain analysis of type-II ‘W’ InGaN–GaNAs quantum well lasers
- (2008) Hongping Zhao et al. JOURNAL OF APPLIED PHYSICS
- Influence of growth temperature and V/III ratio on the optical characteristics of narrow band gap (0.77eV) InN grown on GaN/sapphire using pulsed MOVPE
- (2008) Muhammad Jamil et al. JOURNAL OF CRYSTAL GROWTH
- Controlling the recombination rate of semiconductor active layers via coupling to dispersion-engineered surface plasmons
- (2008) John Henson et al. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS
- Investigation of the Deposition of Microsphere Monolayers for Fabrication of Microlens Arrays
- (2008) Pisist Kumnorkaew et al. LANGMUIR
- Localized surface plasmon-induced emission enhancement of a green light-emitting diode
- (2008) Dong-Ming Yeh et al. NANOTECHNOLOGY
- Optical gain analysis of strain-compensated InGaN–AlGaN quantum well active regions for lasers emitting at 420–500 nm
- (2008) Hongping Zhao et al. OPTICAL AND QUANTUM ELECTRONICS
- Improvement in piezoelectric effect of violet InGaN laser diodes
- (2008) Sheng-Horng Yen et al. OPTICS COMMUNICATIONS
- MOVPE of InN films on GaN templates grown on sapphire and silicon(111) substrates
- (2008) Muhammad Jamil et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Nanostructure engineering of staggered InGaN quantum wells light emitting diodes emitting at 420-510 nm
- (2008) Ronald A. Arif et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- MOVPE and photoluminescence of narrow band gap (0.77 eV) InN on GaN/sapphire by pulsed growth mode
- (2008) Muhammad Jamil et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Self-assembled InGaN quantum dots on GaN emitting at 520nm grown by metalorganic vapor-phase epitaxy
- (2007) Yik-Khoon Ee et al. JOURNAL OF CRYSTAL GROWTH
Find the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
SearchAsk a Question. Answer a Question.
Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.
Get Started