Analysis of InGaN-delta-InN quantum wells for light-emitting diodes

III-Nitride Photonics

(2012) Nelson Tansu et al.   IEEE Photonics Journal

Optical gain improvement in type-II InGaN/GaNSb/GaN quantum well structures composed of InGaN/and GaNSb layers

(2010) Seoung-Hwan Park et al.   APPLIED PHYSICS LETTERS

Optical gain characteristics of staggered InGaN quantum wells lasers

(2010) Hongping Zhao et al.   JOURNAL OF APPLIED PHYSICS

Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes

(2010) Hongping Zhao et al.   SOLID-STATE ELECTRONICS

Fabrication of Asymmetric GaN/InN/InGaN/GaN Quantum-Well Light Emitting Diodes for Reducing the Quantum-Confined Stark Effect in the Blue-Green Region

(2009) Songbek Che et al.   Applied Physics Express

Dip-shaped InGaN/GaN quantum-well light-emitting diodes with high efficiency

(2009) Seoung-Hwan Park et al.   APPLIED PHYSICS LETTERS

High-efficiency staggered 530 nm InGaN/InGaN/GaN quantum-well light-emitting diodes

(2009) Seoung-Hwan Park et al.   APPLIED PHYSICS LETTERS

Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile

(2009) Hongping Zhao et al.   APPLIED PHYSICS LETTERS

Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500–540 nm

(2009) Hongping Zhao et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Optimization of Light Extraction Efficiency of III-Nitride LEDs With Self-Assembled Colloidal-Based Microlenses

(2009) Yik-Khoon Ee et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime

(2009) H.P. Zhao et al.   IET Optoelectronics

THz generation from InN films due to destructive interference between optical rectification and photocurrent surge

(2009) Guibao Xu et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

High mobility InN epilayers grown on AlN epilayer templates

(2008) N. Khan et al.   APPLIED PHYSICS LETTERS

Type-II InGaN-GaNAs quantum wells for lasers applications

(2008) Ronald A. Arif et al.   APPLIED PHYSICS LETTERS

Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes

(2008) Ronald A Arif et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes

(2008) Hongping Zhao et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Self-consistent gain analysis of type-II ‘W’ InGaN–GaNAs quantum well lasers

(2008) Hongping Zhao et al.   JOURNAL OF APPLIED PHYSICS

Influence of growth temperature and V/III ratio on the optical characteristics of narrow band gap (0.77eV) InN grown on GaN/sapphire using pulsed MOVPE

(2008) Muhammad Jamil et al.   JOURNAL OF CRYSTAL GROWTH

Improvement in piezoelectric effect of violet InGaN laser diodes

(2008) Sheng-Horng Yen et al.   OPTICS COMMUNICATIONS

MOVPE of InN films on GaN templates grown on sapphire and silicon(111) substrates

(2008) Muhammad Jamil et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

MOVPE and photoluminescence of narrow band gap (0.77 eV) InN on GaN/sapphire by pulsed growth mode

(2008) Muhammad Jamil et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE