Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

On the increased efficiency in InGaN-based multiple quantum wells emitting at 530–590 nm with AlGaN interlayers

(2015) D.D. Koleske et al.   JOURNAL OF CRYSTAL GROWTH

Development of InGaN-based red LED grown on (0001) polar surface

(2014) Jong-Il Hwang et al.   Applied Physics Express

InGaN based green laser diodes on semipolar GaN substrate

(2014) Masahiro Adachi   JAPANESE JOURNAL OF APPLIED PHYSICS

Metal Organic Vapor Phase Epitaxy of Monolithic Two-Color Light-Emitting Diodes Using an InGaN-Based Light Converter

(2013) Benjamin Damilano et al.   Applied Physics Express

InGaN Light-Emitting Diodes onc-Face Sapphire Substrates in Green Gap Spectral Range

(2013) Shinji Saito et al.   Applied Physics Express

Strain-induced defects as nonradiative recombination centers in green-emitting GaInN/GaN quantum well structures

(2013) Torsten Langer et al.   APPLIED PHYSICS LETTERS

Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy

(2013) Tomohiro Doi et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Performance and polarization effects in (112¯2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers

(2012) Ingrid L. Koslow et al.   APPLIED PHYSICS LETTERS

Enhanced light output power of green LEDs employing AlGaN interlayer in InGaN/GaN MQW structure on sapphire (0001) substrate

(2012) Tomonari Shioda et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Blue-green and white color tuning of monolithic light emitting diodes

(2010) B. Damilano et al.   JOURNAL OF APPLIED PHYSICS

White light emitting diodes with super-high luminous efficacy

(2010) Yukio Narukawa et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Various misfit dislocations in green and yellow GaInN/GaN light emitting diodes

(2010) Mingwei Zhu et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Pros and cons of green InGaN laser on c-plane GaN

(2010) Uwe Strauß et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Strain-compensated InAs/GaNAs quantum dots for use in high-efficiency solar cells

(2008) Ryuji Oshima et al.   APPLIED PHYSICS LETTERS

Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes

(2008) Hongping Zhao et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Optical gain analysis of strain-compensated InGaN–AlGaN quantum well active regions for lasers emitting at 420–500 nm

(2008) Hongping Zhao et al.   OPTICAL AND QUANTUM ELECTRONICS