On the increased efficiency in InGaN-based multiple quantum wells emitting at 530–590 nm with AlGaN interlayers

Published 2015 View Full Article

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Title
On the increased efficiency in InGaN-based multiple quantum wells emitting at 530–590 nm with AlGaN interlayers
Authors
Keywords
Interfaces, X-ray diffraction, Metalorganic vapor phase epitaxy, InGaN, Light-emitting diodes, Solar cells
Journal
JOURNAL OF CRYSTAL GROWTH
Volume 415, Issue -, Pages 57-64
Publisher
Elsevier BV
Online
2015-01-08
DOI
10.1016/j.jcrysgro.2014.12.034

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