Characterizations of Seebeck coefficients and thermoelectric figures of merit for AlInN alloys with various In-contents

III-Nitride Photonics

(2012) Nelson Tansu et al.   IEEE Photonics Journal

Analysis of InGaN-delta-InN quantum wells for light-emitting diodes

(2010) Hongping Zhao et al.   APPLIED PHYSICS LETTERS

Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers

(2010) Jing Zhang et al.   APPLIED PHYSICS LETTERS

Thermoelectric properties of lattice-matched AlInN alloy grown by metal organic chemical vapor deposition

(2010) Hua Tong et al.   APPLIED PHYSICS LETTERS

Optical gain characteristics of staggered InGaN quantum wells lasers

(2010) Hongping Zhao et al.   JOURNAL OF APPLIED PHYSICS

Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes

(2010) Hongping Zhao et al.   SOLID-STATE ELECTRONICS

GaN-Based Integrated Lateral Thermoelectric Device for Micro-Power Generation

(2009) Alexander Sztein et al.   Applied Physics Express

InGaN/GaN multiple quantum well solar cells with long operating wavelengths

(2009) R. Dahal et al.   APPLIED PHYSICS LETTERS

Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile

(2009) Hongping Zhao et al.   APPLIED PHYSICS LETTERS

Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500–540 nm

(2009) Hongping Zhao et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Optimization of Light Extraction Efficiency of III-Nitride LEDs With Self-Assembled Colloidal-Based Microlenses

(2009) Yik-Khoon Ee et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime

(2009) H.P. Zhao et al.   IET Optoelectronics

Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire

(2009) Yik-Khoon Ee et al.   JOURNAL OF CRYSTAL GROWTH

Thermoelectric Properties of In0.3Ga0.7N Alloys

(2009) B. N. Pantha et al.   JOURNAL OF ELECTRONIC MATERIALS

Type-II InGaN-GaNAs quantum wells for lasers applications

(2008) Ronald A. Arif et al.   APPLIED PHYSICS LETTERS

High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap

(2008) Carl J. Neufeld et al.   APPLIED PHYSICS LETTERS

Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes

(2008) K. McGroddy et al.   APPLIED PHYSICS LETTERS

Thermoelectric properties of InxGa1−xN alloys

(2008) B. N. Pantha et al.   APPLIED PHYSICS LETTERS

Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes

(2008) Ronald A Arif et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes

(2008) Hongping Zhao et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

MOVPE of InN films on GaN templates grown on sapphire and silicon(111) substrates

(2008) Muhammad Jamil et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

MOVPE and photoluminescence of narrow band gap (0.77 eV) InN on GaN/sapphire by pulsed growth mode

(2008) Muhammad Jamil et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE