Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes
Published 2011 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes
Authors
Keywords
-
Journal
JOURNAL OF APPLIED PHYSICS
Volume 110, Issue 11, Pages 113110
Publisher
AIP Publishing
Online
2011-12-10
DOI
10.1063/1.3668117
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Erbium-Doped AlInGaN Alloys as High-Temperature Thermoelectric Materials
- (2011) Bed Nidhi Pantha et al. Applied Physics Express
- Strong light extraction enhancement in GaInN light-emitting diodes by using self-organized nanoscale patterning of p-type GaN
- (2011) Sameer Chhajed et al. APPLIED PHYSICS LETTERS
- Optical Properties of Staggered InGaN/InGaN/GaN Quantum-Well Structures with Ga- and N-Faces
- (2011) Seoung-Hwan Park et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- High-temperature characteristics of Seebeck coefficients for AlInN alloys grown by metalorganic vapor phase epitaxy
- (2011) Jing Zhang et al. JOURNAL OF APPLIED PHYSICS
- Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells
- (2011) Hongping Zhao et al. OPTICS EXPRESS
- Light Extraction Efficiency and Radiation Patterns of III-Nitride Light-Emitting Diodes With Colloidal Microlens Arrays With Various Aspect Ratios
- (2011) Xiao-Hang Li et al. IEEE Photonics Journal
- Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography
- (2011) Guangyu Liu et al. Nanoscale Research Letters
- On ternary nitride substrates for visible semiconductor light-emitters
- (2010) T. K. Sharma et al. APPLIED PHYSICS LETTERS
- Analysis of InGaN-delta-InN quantum wells for light-emitting diodes
- (2010) Hongping Zhao et al. APPLIED PHYSICS LETTERS
- Design Strategies for InGaN-Based Green Lasers
- (2010) Anusha Venkatachalam et al. IEEE JOURNAL OF QUANTUM ELECTRONICS
- Improvement in output power of a 460 nm InGaN light-emitting diode using staggered quantum well
- (2010) Chih-Teng Liao et al. JOURNAL OF APPLIED PHYSICS
- Spontaneous emission rate of green strain-compensated InGaN/InGaN LEDs using InGaN substrate
- (2010) Seoung-Hwan Park et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Dip-shaped InGaN/GaN quantum-well light-emitting diodes with high efficiency
- (2009) Seoung-Hwan Park et al. APPLIED PHYSICS LETTERS
- High-efficiency staggered 530 nm InGaN/InGaN/GaN quantum-well light-emitting diodes
- (2009) Seoung-Hwan Park et al. APPLIED PHYSICS LETTERS
- Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile
- (2009) Hongping Zhao et al. APPLIED PHYSICS LETTERS
- Selective Area Metal–Organic Vapor Phase Epitaxy of Nitride Semiconductors for Multicolor Emission
- (2009) T. Shioda et al. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
- Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells
- (2009) Jae-Hyun Ryou et al. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
- Novel Epitaxial Nanostructures for the Improvement of InGaN LEDs Efficiency
- (2009) Taeil Jung et al. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
- LEDs for Solid-State Lighting: Performance Challenges and Recent Advances
- (2009) M.H. Crawford IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
- III-nitride photonic-crystal light-emitting diodes with high extraction efficiency
- (2009) Jonathan J. Wierer et al. Nature Photonics
- High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap
- (2008) Carl J. Neufeld et al. APPLIED PHYSICS LETTERS
- Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes
- (2008) K. McGroddy et al. APPLIED PHYSICS LETTERS
- Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes
- (2008) Hongping Zhao et al. IEEE JOURNAL OF QUANTUM ELECTRONICS
Publish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn MoreFind the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
Search